Method for packaging silicon carbide power device
A packaging method and technology for power devices, which are used in the manufacture of electrical solid devices, semiconductor devices, semiconductor/solid state devices, etc., can solve problems such as high temperature and unbearable module packaging structure, and achieve the effect of preventing cracks.
Inactive Publication Date: 2011-07-20
ZHUZHOU CSR TIMES ELECTRIC CO LTD
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Problems solved by technology
The high-temperature working capability of silicon carbide power devices enables them to give full play to the advantages of high frequency and high power in practical applications. However, the existing module packaging structure cannot withstand higher temperatures, which has become a major bottleneck in the application of silicon carbide power devices.
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[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0029] see figure 1 , showing the packaging method of the silicon carbide power device of the present invention, which specifically includes the following steps.
[0030] Step S101 , selecting aluminum nitride (AlN) directly coated with copper as the lining material, the lining material has high thermal conductivity, and the coefficient of thermal expansion is similar to that of silicon carbide. See figure 2 , The backing plate 21 is rectangular.
[0031] Nickel-plated aluminum silicon carbide (AlSiC) is selected as the substrate material, which has high thermal conductivity and a thermal expansion coefficient close to that of the AlN liner. See image 3 , the substrate 22 is rectangular, slightly larger than the liner 21 . ...
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Abstract
The invention relates to a method for packaging a silicon carbide power device. In the method, copper-clad aluminum nitride is selected as a material of a lining plate; a layer of molybdenum sheet serving as a welding surface is arranged on the lining plate; and nickel-plated aluminum-based silicon carbide is selected as a material of a substrate. The method comprises the following steps of: welding an aluminum-based silicon carbide chip on the welding surface of the lining plate and welding the lining plate on the substrate; welding one end of a lead with an electrode of the silicon carbide chip and welding the other end of the lead with an electrode of the lining plate; and welding a power wiring terminal on the electrode of the lining plate; and mounting a tube shell, filling a heat expansion buffer layer and a sealant and mounting a tube cap. According to the method, the service temperature of the silicon carbide power device can be effectively improved.
Description
technical field [0001] The invention relates to the packaging field of silicon carbide power devices, in particular to a method for packaging silicon carbide power devices. Background technique [0002] In many fields such as automobiles, home appliances, industrial equipment, network communications, and power systems, it is necessary to reduce the power loss of inverters and frequency converters, and power semiconductor devices play a vital role in this. The performance of traditional silicon power devices is approaching its theoretical limit in many aspects, which makes it difficult to meet the requirements of power electronic systems for power switching devices in terms of blocking voltage, on-state current, operating frequency, high efficiency, and high temperature in practical applications. new demands in terms of [0003] In this case, the third-generation power devices based on silicon carbide stand out. With the superior physical properties of silicon carbide materi...
Claims
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IPC IPC(8): H01L21/50H01L21/56H01L21/60
CPCH01L2224/48091
Inventor 丁荣军罗海辉刘博曾文彬雷云吴煜东刘国友彭勇殿张明
Owner ZHUZHOU CSR TIMES ELECTRIC CO LTD