Semiconductor device
A semiconductor and transistor technology, applied in the field of semiconductor devices, can solve problems such as small surge resistance, and achieve the effect of small component area
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no. 1 Embodiment approach
[0143] A first embodiment will be described with reference to the drawings. figure 1 The cross-sectional structure of the semiconductor device according to the first embodiment is shown. Such as figure 1 As shown, a semiconductor layer stack 102 is formed on a substrate 101 such as a silicon substrate. The semiconductor layer stack 102 has a first semiconductor layer 103 and a second semiconductor layer 104 having a larger band gap than the first semiconductor layer 103 . In the vicinity of the interface between the first semiconductor layer 103 and the second semiconductor layer 104 , a high-concentration two-dimensional electron gas (2DEG) layer is formed. The first semiconductor layer 103 may be, for example, GaN with a thickness of 1 μm, and the second semiconductor layer 104 may be, for example, AlGaN with a thickness of 25 nm.
[0144] The semiconductor layer stack 102 has a first element region 106A and a second element region 106B surrounded by an element isolation ...
no. 2 Embodiment approach
[0171] In the first embodiment, the structure for protecting the first transistor 111 when a negative surge is applied to the gate electrode 115 has been described. However, by becoming Figure 13 The structure shown can protect the first transistor 111 when a positive surge is applied to the gate electrode 115 . In the case of protecting the first transistor 111 against positive surges, as Figure 13 As shown, the protective element gate electrode 125 of the second transistor 121 may be connected to the second protective element ohmic electrode 123B through the threshold voltage adjustment circuit 142 .
[0172] Threshold voltage adjustment circuit 142 is composed of two diodes 151C and 151D connected in series between protective element gate electrode 125 and second protective element ohmic electrode 123B. The diode 151C and the diode 151D are connected with their cathodes on the side of the protective element gate electrode 125 . Therefore, if the voltage V applied betwe...
no. 3 Embodiment approach
[0180] The first and second embodiments described the case of protecting a single-gate transistor, but a double-gate transistor can be similarly protected. Figure 17 Showing the circuit configuration of the semiconductor device according to the third embodiment, Figure 18 shows the cross-sectional structure. also, Figure 19 An example of the layout of the semiconductor device according to the third embodiment is shown. Such as Figure 17 ~ Figure 19 As shown, the semiconductor device of this embodiment includes: a double-gate first transistor 211 having a first gate electrode 215A and a second gate electrode 215B; a first protection element 220A connected to the first transistor 211 the second transistor 221A between the first gate electrode 215A and the first ohmic electrode 213A; The transistor 221B constitutes.
[0181] On a substrate 101 such as a Si substrate, a semiconductor layer laminate 102 having a first semiconductor layer 103 and a second semiconductor laye...
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