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Method for controlling seeding form in process of preparing large-sized sapphire single crystal by Kyropoulos method

A control method and large-scale technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of limited popularization and application, low yield of crystal growth, etc., achieve broad application prospects, and grow crystals with high quality , The effect of high success rate of crystal growth

Active Publication Date: 2013-01-23
HARBIN AURORA OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the Kyropoulos method can produce optical-grade large-size sapphire crystals with a weight greater than 31kg, or even greater than 85kg, the crystal growth yield of this method is currently low, generally only about 65%, which greatly limits the further application of this method

Method used

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  • Method for controlling seeding form in process of preparing large-sized sapphire single crystal by Kyropoulos method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment one: the specific technological process of this embodiment is as follows:

[0020] 1. Preparatory work: (1) Put 31 kg of high-purity alumina raw material with a purity of 99.996% into the crucible of the single crystal furnace, install a seed crystal with a diameter of 12 mm on the seed rod, close the single crystal furnace cover, and start Cooling water circulation system; (2) Start the vacuum system to make the pressure in the furnace reach 10 -3 Pa. (3) Start the heating system, adjust the heating voltage, and heat up. When the temperature reaches 2150°C, stop heating, and all the raw materials are melted at this time; after 3 hours of heat preservation, adjust the heating voltage, cool down to 2060°C, and observe the state of the melt level , the liquid convective state is stable at this time, and the relative deviation between the position of the cooling center in the melt and the geometric center of the crucible is less than 15 mm; The positions overl...

Embodiment 2

[0024] Embodiment two: the specific technological process of this embodiment is as follows:

[0025] 1. Preparatory work: (1) Put 85 kg of high-purity alumina raw material with a purity of 99.996% into the crucible of the single crystal furnace, install a seed crystal with a diameter of 18mm on the seed rod, close the single crystal furnace cover, and start Cooling water circulation system; (2) Start the vacuum system to make the pressure in the furnace reach 10 -3 Pa. (3) Start the heating system, adjust the heating voltage, and heat up. When the temperature reaches 2150°C, stop heating. At this time, all the raw materials are melted; after 5 hours of heat preservation, adjust the heating voltage, cool down to 2060°C, and observe the state of the melt level , the liquid convective state is stable at this time, and the relative deviation between the position of the cooling center in the melt and the geometric center of the crucible is 30 mm; The positions overlap; adjust the...

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Abstract

The invention provides a method for controlling seeding form in process of preparing a large-sized sapphire single crystal by a Kyropoulos method. By using the method, four technical processes of preparation work, roasting a seed crystal, diameter shrinkage and multiple-seeding are finished in the process of growing the large-sized sapphire single crystal. Based on a Kyropoulos seeding method, the method is greatly improved and has the advantages that a grown crystal has higher quality and larger size, the success rate of the crystal growing is higher and the like.

Description

(1) Technical field [0001] The invention relates to a sapphire industrial production technology, in particular to a seeding method in the process of growing a sapphire single crystal. (2) Background technology [0002] Sapphire, also known as white sapphire, is the crystal material whose hardness is second only to diamond in the world. Due to its excellent physical, mechanical, chemical and infrared light transmission properties, it has always been an urgently needed material in the fields of microelectronics, aerospace, military industry, etc., especially Optical-grade large-size sapphire material has become a hot spot in research and development and industrialization at home and abroad in recent years due to its characteristics of stable performance, large market demand, comprehensive utilization rate and high product added value. [0003] my country has proposed the "National Semiconductor Lighting Project" plan since 2003, and has initially formed a large-scale productio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/20C30B15/22
Inventor 左洪波杨鑫宏
Owner HARBIN AURORA OPTOELECTRONICS TECH