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Preparation method of ceramic crucible coating layer for ingoting polysilicon

A ceramic crucible and polysilicon technology, which is applied in the field of preparation of ceramic crucible coatings for polysilicon ingots, can solve the difficulties in recycling and reusing the edge and bottom materials of ingots, can not effectively block the pollution of silicon ingots, and has poor demoulding effect Ideal and other issues, to achieve the effect of good mold release, not easy to fall off and peel off, not easy to foam

Inactive Publication Date: 2011-08-31
LIGHTWAY GREEN NEW ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this kind of coating is not strong, it is easy to blister, flake and flake during application, before application or even during spraying
The position where the falling off or peeling off is easy to cause the reaction between silicon and silicon dioxide, which is easy to cause the phenomenon of sticking to the pot and cracking the ingot, and it cannot effectively prevent the contamination of the silicon ingot by the impurities in the crucible
The demoulding effect is not satisfactory, which makes it very difficult to recycle the side skin and bottom material of the ingot

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Embodiment 1, the present embodiment comprises the following steps: (1) configuration of suspension:

[0014] A, the following raw materials are calculated by weight percentage, silicon nitride 50%, deionized water 49%, polyvinyl alcohol PVA 1%;

[0015] B. Put the amount of deionized water in the agitator, after heating to 80°C, pour the amount of PVA into the agitator, and stir evenly;

[0016] C. Place the stirrer in the ultrasonic instrument, slowly pour the amount of silicon nitride into the stirrer, and ultrasonically vibrate for 30 minutes while stirring, fully stir, and configure a suspension;

[0017] (2) Brush the stirred suspension onto the inner wall of the ceramic crucible, and the thickness of the coating is controlled at 400 μm;

[0018] (3) Put the painted ceramic crucible into an oven for sintering, raise the temperature to 1095° C. for 8 hours, keep the temperature for 4 hours, and then cool down to room temperature with the furnace.

Embodiment 2

[0019] Embodiment 2, present embodiment comprises the following steps: (1) configuration of suspension:

[0020] A. Calculated by weight percentage, silicon nitride 70%, deionized water 26%, PVA 4%;

[0021] B. Put the amount of deionized water in the agitator, after heating to 90°C, pour the amount of PVA into the agitator, and stir evenly;

[0022] C. Place the stirrer in the ultrasonic instrument, slowly pour the amount of silicon nitride into the stirrer, and ultrasonically vibrate for 50 minutes while stirring, fully stir, and configure a suspension;

[0023] (2) Brush the stirred suspension onto the inner wall of the ceramic crucible, and the thickness of the coating is controlled at 200 μm;

[0024] (3) Put the painted ceramic crucible into an oven for sintering, heat up to 1050° C. for 10 hours, keep it warm for 2 hours, and then cool down to room temperature with the furnace.

Embodiment 3

[0025] Embodiment 3, the present embodiment comprises the following steps: (1) configuration of suspension:

[0026] A. Calculated by weight percentage, silicon nitride 60%, deionized water 39.5%, PVA 0.5%;

[0027] B. Put the amount of deionized water in the agitator, after heating to 85°C, pour the amount of PVA into the agitator, and stir evenly;

[0028] C. Place the stirrer in the ultrasonic instrument, slowly pour the amount of silicon nitride into the stirrer, and ultrasonically vibrate for 35 minutes while stirring, fully stir, and configure a suspension;

[0029] (2) Brush the stirred suspension onto the inner wall of the ceramic crucible, and the thickness of the coating is controlled at 300 μm;

[0030] (3) Put the painted ceramic crucible into an oven for sintering, heat up to 1100° C. for 9 hours, keep it warm for 3 hours, and then cool down to room temperature with the furnace.

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Abstract

The invention discloses a preparation method of a ceramic crucible coating layer for ingoting polysilicon, which comprises the steps of putting 26%-49% of deionized water into a stirrer, heating the water to be 80-90DEG C, and pouring 50%-70% of silicon nitride into the stirrer to be evenly stirred; slowly pouring 0.5%-4% of PVA (polyvinyl alcohol) into the stirrer, stirring and ultrasonically shaking for more than 30min, and abundantly stirring to prepare suspension liquid; brushing the stirred suspension liquid onto the inner wall of a ceramic crucible, wherein the depth of the coating layer is 200-400mum; and putting the brushed ceramic crucible into an oven for sintering, rising the temperature of the ceramic crucible to be 1050-1100 DEG C after 8-10h, keeping the temperature for 2-4h, and cooling to be at a room temperature with a furnace. The coating layer and the surface of the crucible has high adsorption capacity, and the coating layer is hard to bubble, fall off and strip off, so that the furnace bonding and the ingot cracking of a silicon ingot are reduced, the pollution of impurities in the crucible to the silicon ingot is effectively reduced, and the demolding effect of the silicon ingot is improved.

Description

technical field [0001] The invention relates to a preparation method of a ceramic crucible coating for polycrystalline silicon ingots. Background technique [0002] At present, the crucible coating for solar polysilicon ingots is generally prepared by spraying, that is, silicon nitride and water are prepared in a certain proportion to form a suspension, and the suspension is sprayed onto the inner wall of the square ceramic crucible with a spray gun. Then put the sprayed crucible into an oven for sintering. This method is simple to prepare and low in cost. Therefore, it is widely used. But this coating is not strong, and it is prone to blistering, chipping and peeling during use, before use, or even during spraying. The position of falling off or peeling off is easy to cause the reaction between silicon and silicon dioxide, which is easy to cause the phenomenon of sticking to the pot and cracking the ingot, and it cannot effectively prevent the contamination of the silico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/87
Inventor 刘晓兵李刚
Owner LIGHTWAY GREEN NEW ENERGY
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