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Integrated micro electro-mechanical system (MEMS) device and forming method thereof

A device and inertial sensor technology, applied in piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, electrical components, etc., can solve the problems of large volume, complex process and high cost

Active Publication Date: 2012-10-10
MEMSEN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The problem solved by the present invention is to provide an integrated MEMS device and its forming method, which overcomes the defects of complex process, large volume and high cost in the prior art

Method used

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  • Integrated micro electro-mechanical system (MEMS) device and forming method thereof

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Embodiment Construction

[0106] In the embodiment of the present invention, the movable sensitive element of the inertial sensor is formed by using the first substrate, and the sensitive thin film of the microphone is formed by using the first substrate or one of the conductive layers on the first substrate, so that the integrated MEMS device formed Small size, low cost, and high reliability after packaging.

[0107] In an embodiment of the present invention, the first substrate or one layer of the conductive layer on the first substrate can also be used to form the sensitive film of the pressure sensor and the sensitive film of the microphone, so that an integrated inertial sensor, pressure sensor The integrated MEMS device with the microphone further improves the integration degree of the integrated MEMS device of the present invention, and the formed integrated MEMS device has small volume and low cost.

[0108] Moreover, the embodiments of the present invention use single-crystal semiconductor mat...

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Abstract

The embodiment of the invention provides an integrated micro electro-mechanical system (MEMS) device and a forming method thereof. The integrated MEMS device comprises a first substrate, at least one layer or multiple layers of conducting layers, a movable sensitive element of an inertial sensor, a second substrate, a third substrate, and a sensitive film or backboard electrode of a microphone, wherein the first substrate comprises a first area and a third area; the at least one layer or multiple layers of the conducting layers are formed on the first surface of the first substrate; the movable sensitive element of the inertial sensor is formed by adopting the first substrate of the first area; the second substrate is combined with the surfaces of the conducting layers on the first substrate; the third substrate is combined with one side of the movable sensitive element of the inertial sensor formed by the first substrate; the third substrate and the second substrate are positioned ontwo opposite sides of the movable sensitive element of the inertial sensor respectively; and the sensitive film or backboard electrode of the microphone at least comprises the first substrate of the third area, or one of the conducting layers on the first substrate of the third area. The integrated MEMS device integrated with a pressure sensor, the inertial sensor and the microphone is small in volume and low in cost, and the reliability after packaging is high.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular, the invention relates to an integrated MEMS device and a method for forming the same. Background technique [0002] Since the late 1980s, with the development of micro-electro-mechanical system (Micro-Electro-Mechanical-System, MEMS) technology, various sensors have been miniaturized. [0003] At present, the most widely used sensors mainly include MEMS pressure sensors, MEMS inertial sensors and MEMS microphones. The MEMS pressure sensor is a device for detecting pressure. Current MEMS pressure sensors include silicon piezoresistive pressure sensors and silicon capacitive pressure sensors, both of which are micro-electromechanical sensors produced on silicon chips. MEMS pressure sensors are widely used in automotive electronics such as TPMS (tire pressure monitoring system), consumer electronics such as tire pressure gauges and sphygmomanometers, industrial electronics suc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B3/00B81C1/00
CPCB81B2201/0264B81B7/02B81C1/00B81B2201/0235B81B2201/0257B81B3/00
Inventor 柳连俊
Owner MEMSEN ELECTRONICS