Mold for forming optical component, optical component thereof and manufacturing method of the optical component
A technology for optical components and manufacturing methods, applied in the directions of optical components, optics, manufacturing tools, etc., can solve the problems of incapable of thinning film thickness, durability, insufficient mold release, welding, etc., to reduce friction coefficient, reactivity, etc. low effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1-1
[0107]
[0108] Cemented carbide (WC-Co) was used as the base material of the optical element molding die.
[0109] As the upper mold base of the mold for molding an optical element, a base having a flat surface is used.
[0110] As the base material of the lower mold of the mold for molding an optical element, a base material having a concave surface is used.
[0111] -Formation of surface layer-
[0112] A surface layer of Si-containing diamond-like carbon having a thickness of 10 nm was formed on the surfaces (pressed surfaces) of the upper mold base and the lower mold base described above by plasma CVD under the following conditions. The content of Si in the above-mentioned surface layer is calculated with methane (CH 4 ) gas flow rate (5sccm~200sccm) and tetramethylsilane (TMS) gas flow rate (0.1sccm~5sccm) were adjusted.
[0113] Conditions for plasma CVD:
[0114] High frequency power supply…13.56MHz
[0115] High frequency output...2kW
[0116] Gas pressure…4Pa...
Embodiment 1-2
[0127]
[0128] As the base material of the optical element molding die, the same base material as in Example 1-1 was used.
[0129] -Formation of surface layer-
[0130] A surface layer of Si-containing diamond-like carbon having a thickness of 10 nm was formed on the surfaces (pressed surfaces) of the upper mold base and the lower mold base described above by plasma CVD under the following conditions. The content of Si in the above-mentioned surface layer is calculated with methane (CH 4 ) gas flow rate (5sccm~200sccm) and tetramethylsilane (TMS) gas flow rate (0.1sccm~5sccm) were adjusted.
[0131] Conditions for plasma CVD:
[0132] High frequency power supply…13.56MHz
[0133] High frequency output...2kW
[0134] Gas pressure…4Pa
[0135] Methane (CH 4 ) Gas flow...Adjust to 5 sccm ~ 200 sccm.
[0136] The tetramethylsilane (TMS) gas flow rate... was adjusted to 0.1 sccm to 5 sccm.
[0137] As in Example 1-1, analysis by Raman spectrometry revealed that diamond-...
Embodiment 1-3
[0142]
[0143] In Example 1-1, except having changed the set 2 kW into 1.5 kW about the high-frequency output of plasma CVD, it carried out similarly to Example 1-1, and manufactured the mold 3 for optical element molding.
[0144] As a result of analysis by Raman spectrometry in the same manner as in Example 1-1, diamond-like carbon was formed on the surface layer of the mold 3 for molding an optical element.
[0145] The contents of Si and C in the surface layer were confirmed by XPS analysis in the same manner as in Example 1-1, and it was found that Si / C=0.01.
[0146] When the coefficient of friction of the surface layer was measured in the same manner as in Example 1-1, it was 0.08.
[0147] The surface energy of the above-mentioned surface layer was measured in the same manner as in Example 1-1, and the result was 41mJ / m 2 .
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| strength | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 