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Preparation method of nanowire structure

A technology of nanowires and polycrystalline semiconductors, applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problem of high preparation costs of nanowire structures, and achieve the effect of saving preparation costs

Inactive Publication Date: 2011-11-02
FUDAN UNIV
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Problems solved by technology

[0008] The purpose of the present invention is to provide a method for preparing a nanowire structure, so as to solve the problem that the preparation cost of the nanowire structure is too high in the prior art

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Embodiment Construction

[0035] The preparation method of the nanowire structure proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become apparent from the following description and claims. It should be noted that, the accompanying drawings are all in a very simplified form and use inaccurate ratios, and are only used for the purpose of assisting in explaining the embodiments of the present invention conveniently and clearly.

[0036] The core idea of ​​the present invention is to provide a method for preparing a nanowire structure. In the method, metal thin films are deposited on the sidewall surfaces on both sides of a polycrystalline semiconductor layer. The sidewall surface is diffused, and after annealing, metal-semiconductor compound nanowires are formed on the sidewall surface of the polycrystalline semiconductor layer. Because the preparation...

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Abstract

The invention discloses a preparation method of a nanowire structure. The preparation method comprises the following steps of: depositing metal films on the surfaces of two side walls of a polycrystal semiconductor layer, wherein metals in the metal films are diffused towards the surfaces of the side walls of the polycrystal semiconductor layer; and after annealing, forming metal semiconductor compound nanowires on the surfaces of the side walls of the polycrystal semiconductor layer. In the preparation method of the nanowire structure, the nanowires are formed without a high-resolution-ratio photoetching technique, so preparation cost is greatly saved. The prepared metal semiconductor compound nanowire can also serve as a mask and transfers the nanostructure figure to the next layer of structure, so that preparation of the nanowire structure is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a preparation method of a nanowire structure. Background technique [0002] At this stage, advanced semiconductor integrated circuit technology has entered the nanometer field, and the feature size of transistors will continue to be scaled down. While improving device performance and reducing the cost of a single transistor, higher requirements are also placed on semiconductor process conditions, and Affected by quantum effects, the feature size of devices cannot be continuously reduced indefinitely, traditional semiconductor materials and processes will encounter bottlenecks, and Moore's Law will lose its guiding significance to the semiconductor industry. There is an urgent need to develop new materials and new processes to replace existing materials and processes in integrated circuits. One-dimensional materials such as nanowires and nanotubes, as indispensab...

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Application Information

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IPC IPC(8): B82B3/00B82Y40/00
Inventor 吴东平朱伦胡成朱志炜张世理张卫
Owner FUDAN UNIV