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Overvoltage pulse-enhanced magnetic control sputtering film plating method

A magnetron sputtering coating and pulse technology, applied in the field of material manufacturing, can solve problems such as poor film thickness distribution uniformity, and achieve the effects of simple and stable preparation method, high yield and uniform distribution

Inactive Publication Date: 2013-01-16
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an overvoltage pulse enhanced magnetron sputtering coating method, which solves the problem of poor distribution uniformity of the film thickness along the direction of the target base distance in the prior art, and the thickness of the prepared film increases with the target base distance The average deceleration rate is reduced from 1μm / 100mm in the prior art to 0.04μm / 100mm

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Step 1. After the workpiece is cleaned and dried, it is placed in the vacuum chamber of the magnetron sputtering ion plating equipment. The volume of the vacuum chamber is Select a rectangular Cr target material of 300mm×133mm, and ensure that the target base distance of the workpiece is 180mm.

[0020] The target base distance is the linear distance from the workpiece along the vertical target surface to the target surface.

[0021] Step 2, vacuumize the vacuum chamber to 6×10 -5 Pa, then, feed argon, and maintain the flow of argon to be 15 sccm,

[0022] Apply a DC current of 0.1A to the target, and at the same time, apply a pulse bias voltage with a negative bias value of -450V, a pulse frequency of 250KHz, and a pulse width of 500ns to the workpiece to perform ion cleaning on the workpiece, and the ion cleaning time is 15min .

[0023] Step 3, maintaining the flow rate of argon at 15 sccm;

[0024] Turn off the DC current on the target, and at the same time, ad...

Embodiment 2

[0028] Step 1. After the workpiece is cleaned and dried, it is placed in the vacuum chamber of the magnetron sputtering ion plating equipment. The volume of the vacuum chamber is A rectangular Ti target material of 300mm×133mm is selected, and the target base distance of the workpiece is guaranteed to be 130mm.

[0029] The target base distance is the linear distance from the workpiece along the vertical target surface to the target surface.

[0030] Step 2, vacuumize the vacuum chamber to 3×10 -5 Pa, then, feed argon, and maintain the flow of argon to be 15 sccm;

[0031] Apply a DC current of 0.2A to the target, and at the same time, apply a pulse bias with a negative bias value of -400V, a pulse frequency of 200KHz, and a pulse width of 1000ns to the workpiece to perform ion cleaning on the workpiece, and the ion cleaning time is 20min .

[0032] Step 3, maintaining the flow rate of argon at 17 sccm;

[0033] Turn off the DC current on the target, and at the same time,...

Embodiment 3

[0037] Step 1. After the workpiece is cleaned and dried, it is placed in the vacuum chamber of the magnetron sputtering ion plating equipment. The volume of the vacuum chamber is A rectangular Al target material of 300mm×133mm is selected, and the target base distance of the workpiece is guaranteed to be 60mm.

[0038] The target base distance is the linear distance from the workpiece along the vertical target surface to the target surface.

[0039] Step 2, vacuumize the vacuum chamber to 5×10 -5 Pa, then, feed argon, and maintain the flow of argon to be 20sccm,

[0040] Apply a DC current of 0.4A to the target, and at the same time, apply a pulse bias with a negative bias value of -400V, a pulse frequency of 150KHz, and a pulse width of 500ns to the workpiece to perform ion cleaning on the workpiece; the ion cleaning time is 30min .

[0041] Step 3, maintaining the flow rate of argon at 20 sccm;

[0042]Turn off the DC current on the target, and at the same time, adjust ...

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Abstract

The invention relates to an overvoltage pulse-enhanced magnetic control sputtering film plating method, which comprises the following steps of: after cleaning and drying a workpiece, and putting the workpiece into a vacuum cavity of magnetic control sputtering ion plating equipment; vacuumizing the vacuum cavity, introducing argon, and performing ionic cleaning on the workpiece; performing film plating on the workpiece, wherein in an overvoltage pulse target power supply, pulse peak value voltage of a target material is between 600 and 900 V, the pulse width is between 200 and 500 microseconds, and the pulse frequency is 1 KHz; and cooling to the room temperature, and taking the workpiece out to obtain a film. By the method, the problem of poor distributing uniformity of the thickness of the film along the direction of target base distance in the prior art is solved, average progressively-decreased rate of the thickness of the prepared film with the increase of the target base distance is reduced to 0.04 micrometer / 100 millimeters from 1 micrometer / 100 millimeters in the prior art.

Description

technical field [0001] The invention belongs to the technical field of material manufacturing, and in particular relates to an overvoltage pulse enhanced magnetron sputtering coating method. Background technique [0002] The closed-field unbalanced magnetron sputtering ion plating technology has attracted extensive attention in the field of precision manufacturing and functional thin film preparation due to its advantages such as low deposition temperature and easy deposition of multi-component and gradient films. The technical bottleneck of extremely poor uniformity (average deceleration rate greater than 1μm / 100mm) severely restricts the industrialization of this technology. In order to overcome this shortcoming of the process, many scholars have successively introduced physical concepts such as "non-equilibrium" and "closed field", trying to improve the uniformity of the film thickness along the direction of the target base distance by expanding the plasma region and incr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35
Inventor 蒋百灵曹政
Owner XIAN UNIV OF TECH