Multi-cycle arrangement carrier-free double-integrated chip (IC) package and production method
A technology of chip package and production method, which is applied in semiconductor devices, electric solid state devices, semiconductor/solid state device manufacturing, etc., to achieve the effects of improving test yield and reliability, good electrical performance, and low distortion
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Embodiment 1
[0054] Using 8-inch to 12-inch thinning machine, adopts rough grinding, fine grinding and polishing anti-warping process, the wafer with bump chip is thinned to 250μm, rough grinding speed: 6μm / s, fine grinding speed: 1.0μm / s; the thickness of the wafer without bumps is 100μm, the rough grinding speed is 4μm / s, the fine grinding speed is 0.8μm / s, and the chip warpage prevention process is adopted;
[0055] (2), scribing
[0056] ≤8-inch wafers use DISC 3350 double-knife dicing machine, 8-inch to 12-inch wafers use A-WD-300TXB dicing machine, and the scribing speed is controlled at ≤10mm / s;
[0057] (3), on the core
[0058] For one-time chipping, IC chips with no carrier frame and bumps are used, and flip-chip chipping is adopted; for the semi-finished products of flip-chip chipping, IC chips 7 without bumps are used for secondary chipping, using AD828 / 829 For the core machine, apply glue 13QMI538 on the back of the IC chip 3 with bumps on the first layer, and then stick th...
Embodiment 2
[0081] Use 8-inch to 12-inch thinning machine, adopt rough grinding, fine grinding and polishing anti-warping process, the wafer with bump chip is thinned to 200μm, rough grinding speed: 3μm / s, fine grinding speed: 0.6μm / s; the thickness of the wafer without bumps is 100 μm, the rough grinding speed is 2 μm / s, the fine grinding speed is 0.4 μm / s, and the chip warpage prevention process is adopted;
[0082] (2), scribing
[0083] With embodiment 1;
[0084] (3), on the core
[0085] With embodiment 1;
[0086] (4), Underfill & Curing
[0087] For the semi-finished product of the secondary flip-chip, select an insulating material with a low thermal expansion coefficient α1<1, heat the underfill to 80°C, use vacuum technology to underfill the bumps and frame pads, and finally in a QFN general-purpose oven Bake the product after filling 10 for about 30 minutes;
[0088] (5), pressure welding
[0089] With embodiment 1;
[0090] (6), plastic packaging
[0091] With embodim...
Embodiment 3
[0106] Use 8-inch to 12-inch thinning machine, adopt rough grinding, fine grinding and polishing anti-warping process, the wafer with bump chip is thinned to 200μm, rough grinding speed: 3μm / s, fine grinding speed: 0.6μm / s; the thickness of the wafer without bumps is 100 μm, the rough grinding speed is 2 μm / s, the fine grinding speed is 0.4 μm / s, and the chip warpage prevention process is adopted;
[0107] (2), scribing
[0108] With embodiment 1;
[0109] (3), on the core
[0110] The first core is made of a non-carrier frame and an IC chip 3 with bumps, and the core is flipped; the second core is carried out on the back of the IC chip 3 with bumps, and the IC chip 7 without bumps and glue are used. Diaphragm 6, the back side of the IC chip 7 without bumps has been pasted with adhesive film 6 before dicing. Using a core loading machine with adhesive film bonding function, first set the substrate heating temperature according to the type of adhesive film used. Fix the IC ...
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