Process for producing Czochralski silicon single crystal

Abstract

The invention discloses a process for producing a Czochralski silicon single crystal, which comprises the following steps of: 1, preparing a silicon raw material and a doping agent; 2, charging; 3, vacuumizing; 4, melting; 5, extracting slag, namely 501, performing cooling crystallization, 502, gradually heating, and keeping the crystallization process continuously performed until insoluble substances floating on the surface of a silicon melt are completely condensed by the crystal, and 503, taking the crystal out, and removing the slag; and 6, performing subsequent treatment, namely finishing crystal leading, shoulder expanding, shoulder rotating, diameter equalizing, ending and blowing down processes in turn by using a single crystal furnace according to the conventional treatment process of a Czochralski method to obtain the finished silicon single crystal formed by pulling. The process is reasonable in design, simple in steps, convenient to implement, easy to master and good in using effect, can effectively ensure the quality of the produced silicon single crystal, and can solve the practical problems that slag removing time is difficult to master, the slag extracting effect is poor, the produced silicon single crystal has low purity, and the like.

Description

technical field [0001] The invention belongs to the technical field of silicon single crystal production, and in particular relates to a production process of Czochralski silicon single crystal. Background technique [0002] Single crystal silicon, also known as silicon single crystal, is a semiconductor material. In recent years, with the rapid development of the photovoltaic industry, monocrystalline silicon has been used to make solar cells, showing a situation in which demand exceeds supply. With the development of high technology, it is the common wish of every material manufacturer and device manufacturer to produce nearly perfect high-quality single crystal silicon. This kind of single crystal silicon has good cross-sectional resistivity uniformity, high life, and low carbon content. , Micro-defect density is small, and the oxygen content can be controlled. [0003] At present, the methods for producing single crystal silicon include Czochralski method, zone melting...

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a production process for Czochralski silicon single crystal, which is reasonable in design, simple in method steps, convenient in implementation and easy to master, good in use effect, and can effectively guarantee The quality of the silicon single crystal produced can solve practical problems such as difficulty in grasping the slag removal time, poor slag extraction effect, and low purity of the produced silicon single crystal in the existing silicon single crystal production process.

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