Light-emitting diode (LED) street lamp and high-power LED device

A technology of LED street lamps and LED chips, which is applied in the field of lighting, can solve the problems of shortened working life, large thermal resistance of ceramic substrates, and high junction temperature of chips, and achieve the effects of reducing junction temperature, prolonging working life and improving heat dissipation performance

Active Publication Date: 2011-11-23
SHENZHEN JUFEI OPTOELECTRONICS
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  • Abstract
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  • Application Information

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Problems solved by technology

However, for higher power LEDs used in LED street lamps, the thermal resistance of the ceramic substrate is large, and the heat conduction effect is not good, so that the chip junction temperature is high during the long-term lighting process of the LED, making it difficult to dissipate heat.
Moreover, during the use of this kind of LED street lamp, a large amount of heat energy generated by the po

Method used

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  • Light-emitting diode (LED) street lamp and high-power LED device
  • Light-emitting diode (LED) street lamp and high-power LED device
  • Light-emitting diode (LED) street lamp and high-power LED device

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Embodiment Construction

[0021] The present invention will be further described in detail below through specific embodiments in conjunction with the accompanying drawings.

[0022] Please refer to figure 1 , the LED street lamp of this embodiment includes a substrate 1 , a light-transmitting lampshade 100 and at least one LED chip 3 . Among them, the material of the substrate 1 is silicon, the upper surface of which is coated with a metal interconnection layer, and the upper surface of the metal interconnection layer is also coated with a nano-silver film, and a plurality of LED chips 3 are fixed on the plated nano-silver film by eutectic welding. on the metal interconnection layer and connected to the metal interconnection layer through two gold wires 5 . The metal interconnection layer uses connection holes (silver through holes) 11 penetrating the upper and lower surfaces of the substrate 1 and filled with metallic silver to lead the electrodes of the LED chip 3 to the electrode pins 4 provided un...

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Abstract

The invention discloses a light-emitting diode (LED) street lamp, a high-power LED device and a high-power LED, wherein the LED street lamp comprises a base plate and at least one LED chip, wherein the base plate is a silicon base plate; a metal interconnection layer which is used for extracting an electrode of the LED chip is plated on an upper surface of the silicon base plate; a nanometer silver film is plated on the upper surface of the metal interconnection layer; and the LED chip is fixed on the metal interconnection layer, on which the nanometer silver film is plated, in a mode of eutectic welding. By the invention, the junction temperature of the chip can be effectively reduced, a radiating effect of the LED street lamp is improved, and the service life of the LED street lamp is prolonged.

Description

technical field [0001] The invention relates to the lighting field, in particular to an LED (light emitting diode) street lamp and a high-power LED device. Background technique [0002] LED street lamps generally use soldering process to fix high-power LEDs on aluminum substrates with better heat dissipation performance, and fix lampshades with specific shapes on top of high-power LEDs. [0003] At present, most LEDs used in LED street lamps use ceramic substrates, LTCC and HTCC (Al 2 o 3 ) The thermal conductivity (TC) is generally 3w / m.k~18w / m.k, and the linear expansion coefficient (CTE) is 4.5ppm / ~7ppm / k. It is usually used for LEDs with a power lower than 3W. For example, the thickness of the LED produced by OSRAM Film or low-temperature co-fired ceramic substrate is a kind of LED that is used as a grain heat dissipation substrate, and the minimum value of thermal resistance is about 6.5°C / W. However, for higher power LEDs used in LED street lamps, the thermal resist...

Claims

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Application Information

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IPC IPC(8): F21S8/00F21V19/00F21V17/00H01L33/62H01L25/075F21W131/103F21Y101/02
CPCH01L33/647F21Y2101/02F21W2131/103H01L25/0753H01L2224/48091H01L2224/48137H01L2224/49107H01L2224/8592F21Y2115/10H01L2924/00014
Inventor 孙平如邢其彬
Owner SHENZHEN JUFEI OPTOELECTRONICS
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