Starting method and system of polycrystalline silicon reduction furnace

Abstract

The invention discloses a starting system of a polycrystalline silicon reduction furnace. Silicon cores in the polycrystalline silicon reduction furnace are arranged in an outer ring, a middle ring and an inner ring, wherein the outer ring comprises an outer ring I, an outer ring II and an outer ring III, the middle ring comprises a middle ring I and a middle ring II, and the starting system comprises an alternating current high voltage power supply, a direct current pre-starting power supply, a direct current running power supply, a power supply switching device, a control device, a plurality of high voltage isolators and a plurality of grounding protective circuits. In the starting system disclosed by the invention, exterior of each silicon core is not required to be baked, starting time is shortened, correspondingly, production efficiency is improved, and production cost is reduced; and only the silicon core pairs located on the outer ring are connected into the alternating currenthigh voltage power supply, thus only electrodes corresponding to silicon core pairs located on the outer ring and a cable which is arranged between the silicon core pairs located on the outer ring and the alternating current high voltage power supply are required to be manufactured by adopting a high-insulation grade material and further production cost is reduced. The invention also discloses a starting method of the polycrystalline silicon reduction furnace.

Description

technical field [0001] The invention belongs to the technical field of polysilicon production, and in particular relates to a method and system for starting a polysilicon reduction furnace. Background technique [0002] Silicon material is the most important functional material in the semiconductor industry, electronic information industry and solar photovoltaic cell industry. Polycrystalline silicon is the only raw material for preparing monocrystalline silicon and the material for producing solar cells, and its demand is increasing day by day. When the polysilicon reduction furnace is used to produce polysilicon, the silicon core is used as a heating element. When the temperature in the furnace reaches about 1100°C, the hydrogen gas and trichlorosilane entering the polysilicon reduction furnace undergo a reduction reaction, and the resulting silicon is deposited on the silicon. on the core. [0003] Since silicon has poor electrical conductivity and high resistivity at ro...

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Problems solved by technology

[0004] However, the above two start-up methods all have defects: in the first scheme, the time of external heating must last at least half an hour, which causes the start-up time to be too long, thereby reducing production efficiency, and the heating process will consume a lot of energy, resulting in Increase in production costs; in the second scheme, each silicon core pair is connected to a high-voltage power supply, and all electrodes and cables of the corresponding polysilicon reduction furnace must be made of high-level insulation materials, and with the increase in the number of silicon cores , the production cost will increase significantly

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