Preparation method of sub-micron-sized two-dimensional dielectric cylindrical photonic crystal

Abstract

The invention relates to a preparation method of a sub-micron-sized two-dimensional dielectric cylindrical photonic crystal, and the preparation method comprises: depositing Si3N4 by plasma-enhanced chemical vapor deposition (PECVD), carrying out spin coating, soft baking and vertical crossover exposure, baking after exposure, developing step by step, etching Si3N4 by reactive ion etching (RIE), removing the photoresist, etching the substrate material by inductively coupled plasma etching (ICP) and removing Si3N4. Through the preparation method, the problem that the two-dimensional dielectric cylindrical photonic crystal is difficult to prepare by using a positive photoresist in holographic interferometry is solved. Compared with electron beam exposure and other methods, the preparation method has the advantages of simplicity in operation, low price, precise control, large-area preparation and the like, meets the need of the preparation of the sub-micron-sized two-dimensional dielectric cylindrical photonic crystal and has good application prospects.

Description

technical field [0001] The invention belongs to the field of preparation of photonic crystals, in particular to a preparation method of submicron-sized two-dimensional dielectric column photonic crystals. Background technique [0002] The concept of photonic crystals was developed in 1987 by E.Yablonvitch [Inhibited spontaneous emission in solid-state physics and electronics.Phys Rev Lett, 1987,58(20):2059] of Bell Laboratories of the United States and S.John of Princeton University [ Strong localization of photons in certain disordered dielectric.Phys Rev Lett,1987,58(23):2486] respectively proposed when discussing how to suppress spontaneous emission and photon localization in disordered dielectric materials. It is composed of different dielectric materials It is composed of a periodic arrangement of constant dielectric materials. Due to the periodicity, the dispersion curve of the light wave propagating in it will form a band structure. There may be a photon band gap simi...

AI Technical Summary

Problems solved by technology

When two-dimensional photonic crystals are prepared by using holographic interference multiple exposure methods, the multiple exposures will cause different exposures in different areas, and different exposures will lead to differences in the development rate.

If a single development method is used to ensure that the photoresist does not produce undercutting or peeling off, it can only completely develop the area with a large exposure amount and cannot completely develop the area with a small exposure amount. Form a hole-like structure on photoresist, it is difficult to obtain a columnar structure

[0005] Therefore, in view of the fact that it is difficult to use positive photoresist to make columnar structures by holographic interference, it is very important to invent a method for making submicron-sized two-dimensional dielectric columnar photonic crystals by using holographic interference to make up for the above defects and deficiencies.

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