eeprom core structure embedded in bcd process and its forming method

Abstract

The invention provides an electrically erasable programmable read-only memory (EEPROM) core structure formed by a process embedded into a monolithic integration process of manufacturing a bipolar transistor, a complementary metal oxide semiconductor (CMOS) device and a double-diffusion metal oxide semiconductor (DMOS) device on an identical chip (BCD) and a forming method. The EEPROM core structure formed by the process embedded into the BCD process comprises a selectron and a memotron which are connected in series, wherein the selectron is a laterally diffused n-CHANNEL metal oxide semiconductor (LDNMOS) transistor. In the invention, the forming process of the EEPROM core structure can be embedded into the BCD process to achieve favorability for reducing the complexity of the process.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and semiconductor technology, in particular to an EEPROM core structure embedded in BCD technology and a forming method thereof. Background technique [0002] The BCD process is a monolithic integration process technology that can produce bipolar transistors (Bipolar), complementary metal oxide field effect transistors (CMOS) and double diffused metal oxide field effect transistors (DMOS) on the same chip ) device, referred to as the BCD process. Since the BCD process combines the respective advantages of the above three devices, the BCD process has received more and more attention. [0003] Products such as system-on-chip (SOC) formed by BCD technology can be applied to automotive electronics, power management, etc. In such applications, it is often necessary to integrate electrically erasable programmable read-only memory (EEPROM) in the product, but the traditional Both the BCD ...

AI Technical Summary

Problems solved by technology

The conventional BCD process is also very complicated, including low-voltage CMOS transistors, medium and high-voltage LDNMOS transistors, bipolar transistors, resistors, capacitors and other devices. The basic photolithography level of the BCD process (including two metal layers) is more than 21 layers.

Therefore, if the traditional EERPOM core structure formation process is simply embedded into the BCD process, its process flow will become too complicated and lose the meaning of industrial production

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