Semiconductor thermoelectric power generation component

A technology of thermoelectric power generation and semiconductor, which is applied in the direction of electrical components, thermoelectric devices, thermoelectric device parts, etc., can solve the problems of thermoelectric power generation components contact thermal resistance cold end cooling, etc., to improve thermal stability and power generation efficiency, and improve mechanical strength , The effect of improving power generation efficiency

Inactive Publication Date: 2013-02-13
SOUTH CHINA UNIV OF TECH
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  • Abstract
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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a semiconductor thermoelectric power generation component, which solves the problems of contact thermal resistance and cold end cooling between thermoelectric power generation components

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  • Semiconductor thermoelectric power generation component
  • Semiconductor thermoelectric power generation component

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Embodiment Construction

[0026] The specific implementation of the present invention will be further described below in conjunction with the accompanying drawings, but the implementation and protection scope of the present invention are not limited thereto.

[0027] In the original thermoelectric power generation components (such as figure 1 ) on the basis of a thermoelectric power generation assembly of the present invention (such as figure 2 ) The aluminum alloy substrate 8 is used to replace the traditional alumina ceramic substrate 2, the hot end is coupled to the heat source through the alumina ceramic substrate 1, and the alumina ceramic substrate is welded to the outer side of the copper guide sheet 3 on the hot surface using high-temperature solder. At the cold end, the high-temperature solder 4 is replaced by a high-thermal-conductivity insulating double-sided adhesive 7 so that the aluminum alloy substrate 8 is connected to the outer side of the cold-side copper flow deflector. Use high-te...

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Abstract

The invention relates to a semiconductor thermoelectric power generation component, which comprises a hot-end substrate, a cold-end substrate and a plurality of pairs of PN junction power generation particles, wherein every two adjacent pairs of PN junction power generation particles are connected in series by the inner sides of copper flow deflectors; and the hot-end substrate and the cold-end substrate are positioned at the two ends of the power generation particles respectively. The semiconductor thermoelectric power generation component is characterized in that: the hot-end substrate is an aluminum oxide ceramic substrate which is connected with the outer side of the copper flow deflector at a hot end; and the cold-end substrate is an aluminum alloy substrate which is connected with the outer side of the copper flow deflector at a cold end by using a high-thermal conductivity insulating double faced adhesive tape. In the semiconductor thermoelectric power generation component, thecold-end substrate is improved on the basis of the conventional commercial thermoelectric power generation component, and the film-laminated aluminum alloy substrate with a relatively higher thermal conduction coefficient replaces a conventional aluminum sesquioxide (Al2O3) ceramic substrate. The power generation component has the relatively higher thermal conduction efficient and relatively higher insulating properties, and improves the power generation performance of the thermoelectric power generation component. A method is simple and practical, and industrialization is easy to realize.

Description

technical field [0001] The invention relates to the technical field of semiconductor thermoelectric power generation, in particular to a high-efficiency thermoelectric power generation component that can be used for low-grade heat utilization. Background technique [0002] With the deepening of building a "resource-saving" and "environment-friendly" society, energy conservation and environmental protection have become a common problem faced by human beings in the 21st century. China is in a critical stage of sustainable development, and it is of great significance to fully recycle low-grade energy, waste heat, and waste heat energy. Our country is very short of energy, the utilization rate of energy is low, all kinds of industrial waste heat, waste heat and other low-grade thermal energy have not been effectively utilized, and there is an urgent need to develop new energy utilization technologies to save energy and improve energy utilization efficiency. [0003] Semiconduct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/02H01L35/00
Inventor 朱冬生吴红霞漆小玲
Owner SOUTH CHINA UNIV OF TECH
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