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Photoacid generator, its preparation method and resist composition containing the photoacid generator

A photoacid generator, selected technology, applied in the preparation of sulfonates, photosensitive materials for optomechanical equipment, organic chemistry, etc., can solve problems such as deficiencies

Inactive Publication Date: 2011-12-07
KOREA KUMHO PETROCHEMICAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at the current level, studies for improving the properties of chemically amplified resists by modifying the anionic moieties of photoacid generators are still insufficient.

Method used

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  • Photoacid generator, its preparation method and resist composition containing the photoacid generator
  • Photoacid generator, its preparation method and resist composition containing the photoacid generator
  • Photoacid generator, its preparation method and resist composition containing the photoacid generator

Examples

Experimental program
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Effect test

Embodiment 1

[0202] A resist solution was prepared in the same manner as in Comparative Example 1, except that 3 parts by weight of adamantane-1-carboxylic acid-3,3- Difluoro-3-sulfo-propyl ester diphenylmethylphenylsulfonium salt as photoacid generator. The properties of the resist solution were evaluated.

Embodiment 2

[0204] A resist solution was prepared in the same manner as in Comparative Example 1, except that 5 parts by weight of adamantane-1-carboxylic acid-3,3- Difluoro-3-sulfo-propyl ester diphenylmethylphenylsulfonium salt as photoacid generator. The properties of the resist solution were evaluated.

Embodiment 3

[0206] A resist solution was prepared in the same manner as in Comparative Example 1, except that 7 parts by weight of adamantane-1-carboxylic acid-3,3- Difluoro-3-sulfo-propyl ester diphenylmethylphenylsulfonium salt as photoacid generator. The properties of the resist solution were evaluated.

[0207] Properties of Comparative Example 1 and Examples 1 to 3, such as sensitivity, resolution and LWR, were evaluated, and the results are listed in Table 1 below.

[0208] In the case of LWR, the pattern roughness of a 0.10-μm line-and-space (L / S) pattern formed after development was observed, and the degree of improvement in LWR was graded from 1 to 5, Comparative Example 1 The pattern obtained in the grade 1. A larger value indicates better LWR characteristics.

[0209] In the case of sensitivity, the exposure amount for forming a 0.10-μm line-and-space (L / S) pattern with a line width of 1:1 is specified as the optimum exposure amount, and when the sensitivity is set equal to ...

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Abstract

PROBLEM TO BE SOLVED: To provide a photoacid generator, to provide a method for producing the same, and to provide a resist composition containing the same.SOLUTION: The photoacid generator is a compound represented by chemical formula (wherein, Y is either one group selected from the category consisting of 3C-30C cycloalkyl and 3C-30C cycloalkenyl; Q<SB POS="POST">1< / SB>and Q<SB POS="POST">2< / SB>are each independently a halogen atom; X is either one group selected from the category consisting of alkanediyl, alkenediyl, NR', S, O, CO, and combination thereof, wherein R' is either one group selected from the category consisting of H and alkyl; n is an integer of 0-5; and A<SP POS="POST">+< / SP>is an organic counterion). This photoacid generator, which is low in the diffusive speed of an acid generated under exposure and short in the acid's diffusive distance and has an appropriate acidity, therefore can improve LWR (line width roughness) characteristics and can suppress its own seeping into a solvent such as pure water used in a process.

Description

technical field [0001] The invention relates to a photoacid generator, a preparation method thereof and a resist composition containing the photoacid generator. More specifically, the present invention relates to a photoacid generator capable of generating an acid upon exposure, the acid having a low diffusion rate, a short diffusion distance, and moderate acidity, thereby capable of improving line width roughness (LWR) characteristics, and capable of Its elution in a solvent such as pure water used in processing is controlled. The invention also relates to a preparation method of the photoacid generator and a resist composition containing the photoacid generator. Background technique [0002] As microprocessing methods using photolithography change from generation to generation, photoresists with higher resolution are required, and chemically amplified resists have been developed for this need. This chemically amplified resist composition contains a photoacid generator. ...

Claims

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Application Information

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IPC IPC(8): G03F7/004C07C309/12C07C303/32C07C381/12
Inventor 韩俊熙金真湖赵承德申大铉
Owner KOREA KUMHO PETROCHEMICAL CO LTD
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