Photoacid generator, its preparation method and resist composition containing the photoacid generator

A technology of photoacid generators and compounds, applied in the preparation of sulfonates, photosensitive materials for optomechanical equipment, organic chemistry, etc., can solve problems such as short diffusion distance, improve LWR) characteristics, and low diffusion rate Effect

Active Publication Date: 2011-12-21
SK MATERIALS PERFORMANCE CO LTD
View PDF5 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at the current level, studies for improving the properties of chemically amplified resists by modifying the anionic moieties of photoacid generators are still insufficient.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoacid generator, its preparation method and resist composition containing the photoacid generator
  • Photoacid generator, its preparation method and resist composition containing the photoacid generator
  • Photoacid generator, its preparation method and resist composition containing the photoacid generator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0208] A resist solution was prepared in the same manner as in Comparative Example 1, except that 3 parts by weight of benzoic acid-2,2-difluoro-2 represented by Formula B in Reaction Formula 4 prepared in Synthesis Example 1 was used. -Sulfo-propyl ester diphenylmethylphenylsulfonium salt as photoacid generator. The properties of the resist solution were evaluated.

Embodiment 2

[0210] A resist solution was prepared in the same manner as in Comparative Example 1, except that 5 parts by weight of benzoic acid-2,2-difluoro-2 represented by Formula B in Reaction Formula 4 prepared in Synthesis Example 1 was used. -Sulphopropyl ester diphenylmethylphenylsulfonium salt as photoacid generator. The properties of the resist solution were evaluated.

Embodiment 3

[0212] A resist solution was prepared in the same manner as in Comparative Example 1, except that 7 parts by weight of benzoic acid-2,2-difluoro-2 represented by Formula B in Reaction Formula 4 prepared in Synthesis Example 1 was used. -Sulphopropyl ester diphenylmethylphenylsulfonium salt as photoacid generator. The properties of the resist solution were evaluated.

[0213] Properties of Comparative Example 1 and Examples 1 to 3, such as sensitivity, resolution and LWR, were evaluated, and the results are listed in Table 1 below.

[0214] In the case of LWR, the pattern roughness of a 0.10-μm line-and-space (L / S) pattern formed after development was observed, and the degree of improvement in LWR was graded from 1 to 5, Comparative Example 1 The pattern obtained in the grade 1. A larger value indicates better LWR characteristics.

[0215] In the case of sensitivity, the exposure amount for forming a 0.10-μm line-and-space (L / S) pattern with a line width of 1:1 is specified ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

There are provided a photoacid generator, a method for manufacturing the same, and a resist composition comprising the same. The photoacid generator is a compound represented by the following formula 1, wherein Y represents any one selected from the group consisting of analkyl group substituted with an aryl group, and an aromatic hydrocarbon group; Q1 and Q2 each independently represent a halogenatom; X represents any one selected from the group consisting of an alkanediyl, an alkenediyl, NR', S, O, CO and combinations thereof; R' represents any one selected from the group consisting of a hydrogen atom and an alkylgroup; n represents an integer from 0 to 5; and A+ represents an organic counterion. The photoacid generator can produce, at the time of exposure, an acid which has a low diffusion rate, has a short diffusion distance, and exhibits an appropriate of degree of acidity so that the line width roughness (LWR) characteristics can be improved, and elution of which in a solvent such as pure water that is used in the process can be controlled.

Description

technical field [0001] The invention relates to a photoacid generator, a preparation method thereof and a resist composition containing the photoacid generator. More particularly, the present invention relates to a photoacid generator capable of generating an acid upon exposure, which has a low diffusion rate, has a short diffusion distance, and exhibits an appropriate degree of acidity, thereby enabling improvement in line width roughness (LWR) characteristics, and can control its elution in a solvent such as pure water used in processing, and the present invention also relates to a preparation method of the photoacid generator and a resist composition containing the photoacid generator. Background technique [0002] As microprocessing methods using photolithography change from generation to generation, photoresists with higher resolution are required, and in response to this need, chemically amplified resists have been developed. This chemically amplified resist compositi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004C07C381/12C07C309/12C07C303/32
Inventor 金真湖徐东辙任铉淳洪容和
Owner SK MATERIALS PERFORMANCE CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap