Photoacid generator, its preparation method and resist composition containing the photoacid generator
A technology of photoacid generators and compounds, applied in the preparation of sulfonates, photosensitive materials for optomechanical equipment, organic chemistry, etc., can solve problems such as short diffusion distance, improve LWR) characteristics, and low diffusion rate Effect
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Embodiment 1
[0208] A resist solution was prepared in the same manner as in Comparative Example 1, except that 3 parts by weight of benzoic acid-2,2-difluoro-2 represented by Formula B in Reaction Formula 4 prepared in Synthesis Example 1 was used. -Sulfo-propyl ester diphenylmethylphenylsulfonium salt as photoacid generator. The properties of the resist solution were evaluated.
Embodiment 2
[0210] A resist solution was prepared in the same manner as in Comparative Example 1, except that 5 parts by weight of benzoic acid-2,2-difluoro-2 represented by Formula B in Reaction Formula 4 prepared in Synthesis Example 1 was used. -Sulphopropyl ester diphenylmethylphenylsulfonium salt as photoacid generator. The properties of the resist solution were evaluated.
Embodiment 3
[0212] A resist solution was prepared in the same manner as in Comparative Example 1, except that 7 parts by weight of benzoic acid-2,2-difluoro-2 represented by Formula B in Reaction Formula 4 prepared in Synthesis Example 1 was used. -Sulphopropyl ester diphenylmethylphenylsulfonium salt as photoacid generator. The properties of the resist solution were evaluated.
[0213] Properties of Comparative Example 1 and Examples 1 to 3, such as sensitivity, resolution and LWR, were evaluated, and the results are listed in Table 1 below.
[0214] In the case of LWR, the pattern roughness of a 0.10-μm line-and-space (L / S) pattern formed after development was observed, and the degree of improvement in LWR was graded from 1 to 5, Comparative Example 1 The pattern obtained in the grade 1. A larger value indicates better LWR characteristics.
[0215] In the case of sensitivity, the exposure amount for forming a 0.10-μm line-and-space (L / S) pattern with a line width of 1:1 is specified ...
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