Photoacid generator, its preparation method and resist composition containing the photoacid generator

A technology of photoacid generators and compounds, applied in the preparation of sulfonates, photosensitive materials for optomechanical equipment, organic chemistry, etc., can solve problems such as short diffusion distance, improve LWR) characteristics, and low diffusion rate Effect
CN102289149AActive Publication Date: 2011-12-21SK MATERIALS PERFORMANCE CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SK MATERIALS PERFORMANCE CO LTD
Publication Date
2011-12-21

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Abstract

There are provided a photoacid generator, a method for manufacturing the same, and a resist composition comprising the same. The photoacid generator is a compound represented by the following formula 1, wherein Y represents any one selected from the group consisting of analkyl group substituted with an aryl group, and an aromatic hydrocarbon group; Q1 and Q2 each independently represent a halogenatom; X represents any one selected from the group consisting of an alkanediyl, an alkenediyl, NR', S, O, CO and combinations thereof; R' represents any one selected from the group consisting of a hydrogen atom and an alkylgroup; n represents an integer from 0 to 5; and A+ represents an organic counterion. The photoacid generator can produce, at the time of exposure, an acid which has a low diffusion rate, has a short diffusion distance, and exhibits an appropriate of degree of acidity so that the line width roughness (LWR) characteristics can be improved, and elution of which in a solvent such as pure water that is used in the process can be controlled.
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Description

technical field

[0001] The invention relates to a photoacid generator, a preparation method thereof and a resist composition containing the photoacid generator. More particularly, the present invention relates to a photoacid generator capable of generating an acid upon exposure, which has a low diffusion rate, has a short diffusion distance, and exhibits an appropriate degree of acidity, thereby enabling improvement in line width roughness (LWR) characteristics, and can control its elution in a solvent such as pure water used in processing, and the present invention also relates to a preparation method of the photoacid generator and a resist composition containing the photoacid generator. Background technique

[0002] As microprocessing methods using photolithography change from generation to generation, photoresists with higher resolution are required, and in response to this need, chemically amplified resists have been developed. This chemically amplified resist compositi...

Claims

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