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Preparation method of coupling waveguide laser of integrated photonic crystal phase modulator

A phase modulator, coupled waveguide technology, applied in semiconductor lasers, optical waveguide semiconductor structures, lasers, etc., to achieve the effect of ensuring stability and high quality

Active Publication Date: 2012-08-15
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

[0004] The main purpose of the present invention is to provide a method for preparing a coupled waveguide laser integrated with a photonic crystal phase modulator, to solve the phase conversion problem of the out-of-phase mode in the coupled waveguide, and to achieve the purpose of achieving stability and high beam quality at the same time

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  • Preparation method of coupling waveguide laser of integrated photonic crystal phase modulator
  • Preparation method of coupling waveguide laser of integrated photonic crystal phase modulator
  • Preparation method of coupling waveguide laser of integrated photonic crystal phase modulator

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Embodiment Construction

[0027] see figure 1 , figure 2 Shown, the preparation method of the coupled waveguide laser of a kind of integrated photonic crystal phase modulator provided by the present invention, wherein each unit comprises the following steps:

[0028] Step 1: Take an active gallium arsenide epitaxial wafer 100, the active gallium arsenide epitaxial wafer 100 includes a substrate 16, a lower confinement layer 15, an active layer 14 and an upper confinement layer 13;

[0029] Step 2: Etching the periodic coupling waveguide structure 10 on the upper confinement layer 13 of the active gallium arsenide epitaxial wafer 100; 3 do not inject;

[0030] Step 3: Prepare metal electrodes 11 and 17 respectively on the surface of the periodically coupled waveguide structure 10 and under the substrate 16;

[0031] Step 4: Prepare a photonic crystal phase modulator 20 on one side of the coupling waveguide structure 10, and the distance between the coupling waveguide structure 10 and the photonic cr...

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Abstract

The invention provides a preparation method of a coupling waveguide laser of an integration photonic crystal phase modulator. Each unit comprises the following steps: (1) taking an active gallium arsenide epitaxial wafer which comprises a substrate, a lower restriction layer, an active layer and an upper restriction layer; (2) etching a periodic coupling waveguide structure on the upper restriction layer of the active gallium arsenide epitaxial wafer; (3) preparing a metal electrode on the periodic coupling waveguide structure and under the substrate; (4) preparing a photonic crystal phase modulator at one side of the coupling waveguide structure; (5) preparing a transmission waveguide which is in a wedge form at a side surface of the photonic crystal phase modulator, wherein the side surface is close to a side of the periodic coupling waveguide structure; (6) preparing a plurality of air holes on the surface of the photonic crystal phase modulator by employing a method of dry method etching and forming an air hole array to complete the preparation method of the coupling waveguide laser of the integration photonic crystal phase modulator.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a method for preparing a coupled waveguide laser integrated with a photonic crystal phase modulator. Background technique [0002] A coupled waveguide is a structure commonly used in semiconductor lasers for mode selection. In coupled waveguide lasers, the out of phase (out of phase) mode usually has the highest gain and is the preferential lasing mode; but the out of phase mode has a field phase difference of π between adjacent waveguides, and the lateral far field is double peak structure. Another mode in the coupled waveguide laser, the In phase mode, has a single-peak far field, which is the expected mode. In order to obtain the lasing of the in-phase mode, various schemes have been proposed, such as using the plate coupling method to increase the loss of the out-of-phase mode to offset its gain advantage or using selective pumping to change the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/323H01S5/20
Inventor 郑婉华陈微张建心渠红伟付非亚
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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