Photoetching method

A technology of photolithography and photolithography pattern, which is applied in the field of photolithography, can solve the problems of photolithography pattern peeling and other problems, and achieve the effect of avoiding peeling and steric hindrance effect

Active Publication Date: 2012-01-11
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

From the above analysis, it can be seen that the surface of the substrate still has a large number of hydrophilic hydroxyl groups, and the PR after spin coating may still be difficult to adhere to the surface of the substrate well, resulting in peeling off of the photolithographic pattern.

Method used

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the solutions of the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0027] The core idea of ​​the present invention is: adopt carbon dioxide (CO 2 ) and hydrogen (H 2 ) of the mixed gas on the substrate surface for plasma treatment, the substrate surface and CO 2 and H 2 After the chemical reaction of the mixed gas of the substrate surface, the hydroxyl group on the substrate surface is converted into a methyl group, and the volume of the methyl group is relatively small. When it replaces the hydroxyl group, if there are N hydroxyl groups on the substrate surface, it can also be spaced on the substrate The surface accommodates the substituted N methyl groups, avoiding the steric hindrance effect, and changing the surface of the substrate from hydrophilic to hydrophobic. Therefore, the PR after spin co...

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Abstract

The invention discloses a photoetching method. The method comprises the following steps of: carrying out plasma treatment on the surface of a substrate by adopting the mixed gas of CO2 and H2; rotatably coating photo resistance (PR) on the surface of the substrate to form a photoetching pattern. By adopting the method, photoetching pattern flaking can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a photolithography method. Background technique [0002] With the development of the semiconductor manufacturing process, the area of ​​the semiconductor chip is getting smaller and smaller, so the precision of the semiconductor process becomes more important. In the semiconductor manufacturing process, one of the important processes is photolithography. Photolithography is the process of transferring the pattern on the mask to the photolithography pattern on the wafer. Therefore, the quality of photolithography will directly affect the final formed chip. performance. [0003] Since the main component of the substrate is silicon dioxide (SiO 2 ), wherein silicon ions on the surface of the substrate can combine with the hydroxyl group (-OH) of water molecules in the air, thereby generating compounds with hydroxyl groups on the substrate surface, compounds with hydroxyl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00C23C16/513H01L21/027
Inventor 安辉郝静安
Owner SEMICON MFG INT (SHANGHAI) CORP
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