Preparation method of high-residual internal stress Ni-Mn-Ga magnetically-driven memory alloy film

A technology of ni-mn-ga and memory alloy, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problem of high magnetic field threshold, achieve high residual compressive stress and reduce magnetic field threshold Effect

Inactive Publication Date: 2012-02-08
NORTHEAST GASOLINEEUM UNIV
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a large residual internal stress Ni-Mn-Ga magnetically driven memory alloy film preparation method, which is used to solve the problem of high magnetic field threshold of the existing Ni-Mn-Ga magnetically driven memory alloy film

Method used

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  • Preparation method of high-residual internal stress Ni-Mn-Ga magnetically-driven memory alloy film
  • Preparation method of high-residual internal stress Ni-Mn-Ga magnetically-driven memory alloy film
  • Preparation method of high-residual internal stress Ni-Mn-Ga magnetically-driven memory alloy film

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Embodiment 1

[0021] The preparation method of this large residual internal stress Ni-Mn-Ga magnetic drive memory alloy film is as follows,

[0022] 1. To prepare the Ni-Mn-Ga alloy target material, three metals with a purity of 99.99wt%-Ni, 99.9wt%-Mn and 99.99wt%-Ga were respectively taken as 47 parts, 32 parts and 21 parts according to the molar ratio Proportioning raw materials, using a non-consumable vacuum electric arc furnace to prepare targets under an argon protective atmosphere, its chemical composition is Ni47Mn32Ga21 (at%); before smelting, use a mechanical pump and a molecular pump to evacuate the electric arc furnace to 1×10 -3 Pa, and then filled with high-purity argon with a volume concentration of 99.999% to control the vacuum at 2×10 -2 About Pa; after starting smelting, turn over the smelting four times and add magnetic stirring, take it out after cooling; use wire cutting method to cut it into a circular target with a size of ?60mm×2mm, and remove surface impurities by m...

Embodiment 2

[0026] The difference between the preparation method of the large residual internal stress Ni-Mn-Ga magnetically driven memory alloy thin film in this embodiment and the embodiment 1 is that the substrate bias voltage is 10V.

Embodiment 3

[0028] The difference between the preparation method of the large residual internal stress Ni-Mn-Ga magnetically driven memory alloy thin film in this embodiment and the embodiment 1 is that the substrate bias is 20V.

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Abstract

The invention relates to a preparation method of a high-residual internal stress Ni-Mn-Ga magnetically-driven memory alloy film. The preparation method comprises the steps of: 1, preparing an Ni-Mn-Ga alloy target material: respectively taking 47 parts of Ni, 32 parts of Mn and 21 parts of Ga according to the mol part ratio for preparing materials, and preparing the target material by using a non-self-consumption vacuum arc furnace under the argon protection atmosphere; 2, cleaning a substrate; and 3, preparing an Ni-Mn-Ga film by using a high-vacuum magnetic control sputtering instrument: placing the target material prepared in the step 1 on the monocrystalline silicon substrate cleaned in the step 2, applying bias voltage on the substrate by using the high-vacuum magnetic control sputtering instrument to generate magnetic control sputtering, and preparing the Ni-Mn-Ga film. The Ni-Mn-Ga alloy film prepared by optimizing bias process parameters of the magnetic control sputtering substrate has high residual stress which can assist an external magnetic field to drive a martensite twin-plane boundary to move, thus the threshold value of the magnetic filed can be effectively reduced.

Description

1. Technical field: [0001] The invention relates to a method for preparing a Ni-Mn-Ga magnetic shape memory alloy, in particular to a method for preparing a large residual internal stress Ni-Mn-Ga magnetic drive memory alloy thin film. 2. Background technology: [0002] Ni-Mn-Ga magnetically actuated shape memory alloy is a new type of shape memory material developed in recent years. Under the action of an external magnetic field, the reorientation of the martensitic twin deformation or the magnetic field induces the martensitic phase transformation to produce a large reversible strain. , realizing the combination of large output strain and high response frequency, has become one of the research hotspots in the field of shape memory alloys. However, Ni-Mn-Ga bulk materials still have some shortcomings such as high brittleness, poor uniformity and quality stability, which largely limit the practical application of this material. Compared with bulk materials, Ni-Mn-Ga alloy t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16
Inventor 刘超牟海维周围高新成刘文嘉张坤
Owner NORTHEAST GASOLINEEUM UNIV
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