Wiring structure forming method
A wiring structure and inverted trapezoidal technology, applied in the field of wiring structure formation, can solve the problems of unfavorable manufacturing cost, process quality stability, high processing cost of SOG planarization process, unfavorable cost control, etc., to achieve excellent photoelectric performance, improve Effect of step morphology, low film stress
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[0032] In the prior art wiring structure formation process, methods such as SOG planarization process are often used to fill the depressions in the front dielectric layer and metal layer, but such methods are relatively complicated and are not conducive to cost control.
[0033] In this embodiment, on the premise of not using the SOG planarization process, the climbing morphology of each film layer is improved by adopting oblique hole contact holes, inverted trapezoidal through-hole structures, and bowl-shaped metal layer openings to meet the step The requirements for parameters such as coverage and step shape are also conducive to reducing costs.
[0034]The present invention will be further described below in conjunction with specific embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.
[0035] image 3 A schematic flowchart showing the method for forming the wiring structure of this embodiment, including: ...
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