Semiconductor device, method for manufacturing same, and display device
A technology for display devices and semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, measuring devices, etc., can solve problems such as increased contact resistance, insufficient TFD current, and poor contact
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Embodiment approach 1
[0147] refer to Figure 1 ~ Figure 3 The configuration of the semiconductor device according to Embodiment 1 will be described. in, figure 2 The shades of color in the cathode region 8n or the anode region 8p in (a) and (b) represent differences in crystallinity, and crystal destruction progresses in regions with darker colors, resulting in lower crystallinity. Additionally, with Figure 24 shown in the existing semiconductor device the same, even in the figure 2 Also in the semiconductor device according to Embodiment 1 shown, conditions are set such that the peak of the depth profile of impurities doped by ion implantation exists in the insulating film.
[0148] The semiconductor device of this embodiment, such as figure 1 As shown in (e), it includes: a substrate 1 , a base layer 14 formed on the substrate 1 , and a TFD 100 d and a TFT 100 t formed on the base layer 14 . TFD100d functions as a light sensor.
[0149] The TFD 100d is a TFD of a PIN structure, and incl...
Deformed example 1
[0201] The low-concentration impurity regions 7n and 7p can also be formed by utilizing the difference in film thickness of the insulating film 3 . That is, the insulating film 3 may also be as Figure 7 As shown in (a) and (b), the first insulating film 3a and the second insulating film 3b are stacked on the low-concentration impurity regions 7n and 7p, and only the second insulating film 3b is formed on the channel region 5d, the cathode region 8n, and the anode region 8p. The structure formed by two insulating films 3b. In this way, the insulating film 3 may have a structure having a film thickness difference. Hereinafter, a method of forming the insulating film 3 having a film thickness difference, the channel region 5d, the cathode region 8n, and the anode region 8p will be described.
[0202] First, the first insulating film 3 a having a film thickness of 20 to 200 nm (preferably 20 to 80 nm, for example, 50 nm) is formed so as to cover the crystalline semiconductor la...
Deformed example 2
[0211] Especially preferred: if Figure 8 , 9 As shown, the low-concentration impurity region 7n is arranged between the cathode region 8n and the channel region 5d. That is, it is preferable that the cathode region 8n, the low-concentration impurity region 7n, and the channel region 5d are arranged adjacent to each other in this order. In addition, it is particularly preferable that the cathode region 8n, the low-concentration impurity region 7n, the channel region 5d, and the anode region 8p be arranged adjacent to each other in this order. Thereby, since the low-concentration impurity region 7 n can function similarly to an LDD (Lightly Doped Drain: Lightly Doped Drain) in a TFT, leakage current can be suppressed. However, in this specification, a configuration in which a low-concentration impurity region is arranged between a cathode region and an anode region and functions similarly to an LDD in a TFT is referred to as an LDD structure.
[0212] In addition, since the ...
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