Photoelectric conversion semiconductor layer, manufacturing method thereof, photoelectric conversion device, and solar cell
A photoelectric conversion device and photoelectric conversion technology, applied in the field of solar cells, can solve the problems of no description, no description of the specific method of photoelectric conversion layer, and impractical conversion efficiency, etc., and achieve the effect of high photoelectric conversion efficiency
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Embodiment 1
[0158] Mo lower electrodes were formed on soda-lime glass by RF sputtering. The thickness of the lower electrode was 1.0 μm. Next, the above-mentioned flaky particles P1 were dispersed in an aqueous solution containing 0.3M sodium sulfide at a particle concentration of 30% to prepare a paint, which was applied on the lower electrode and dried at 200°C. After that, a solution of cyclohexanone with Xeonex (manufactured by Zeon Corporation) therein was impregnated into the paint and dried. In this way, CuInS in which a plurality of flake-like particles P1 are arranged in a single layer was obtained 2 photoelectric conversion layer.
[0159] Next, a semiconductor film having a laminated structure is formed as a buffer layer. First, a CdS film was deposited with a thickness of about 50 nm by chemical deposition. The chemical deposition is performed by heating an aqueous solution containing Cd nitrate, thiourea, and ammonium to about 80° C. and dipping the photoelectric conversi...
Embodiment 2
[0162] A photoelectric conversion device was obtained in the same manner as in Example 1 except that the particles used were flaky particles P2 instead of flaky particles P1 , and the flaky particles P2 were arranged in four layers. The measured photoelectric conversion efficiency of the device was 12%.
Embodiment 3
[0164] An aluminum alloy 1050 (99.5% Al purity, 0.30 mm thickness) used as a base material was anodized to form an anodized film on each side of the material, and the anodized material was washed and dried, thereby obtaining anodized substrate. The anodized film had a thickness of 9.0 μm (including a barrier layer thickness of 0.38 μm) with pores having a pore diameter of about 100 nm. Anodization was performed using a DC voltage of 40V in a 16°C electrolyte containing 0.5M oxalic acid. A photoelectric conversion layer of the present invention was obtained in the same manner as in Example 1 except that an anodized substrate was used instead of the soda lime glass substrate. The photoelectric conversion efficiency of the device was measured to be 13%.
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