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Magnetic memory device and method of manufacturing the same

A magnetic memory and component technology, applied in the field of magnetic memory components, can solve problems such as information loss and achieve the effect of high-speed current operation

Inactive Publication Date: 2012-03-14
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since DRAM is a volatile memory whose information is lost when power is turned off, a non-volatile memory that does not lose information is required

Method used

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  • Magnetic memory device and method of manufacturing the same
  • Magnetic memory device and method of manufacturing the same
  • Magnetic memory device and method of manufacturing the same

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Experimental program
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Embodiment approach

[0034] 1. Overview of magnetic memory structure

[0035] First, an explanation will be given of a magnetic memory structure used as a magnetic memory element according to an embodiment of the present invention. figure 1 An overview of the structure of a magnetic memory is schematically shown.

[0036] The magnetic memory 10 includes two types of address wirings crossing each other, such as word lines and bit lines, and the magnetic memory element 1 is located near the intersection of the two types of address wirings. The magnetic memory element 1 includes a structure as described in the following embodiments.

[0037] In the magnetic memory 10, the drain region 8, the source region 7, and the gate electrode 3 configured to select a transistor corresponding to the memory element 1 are individually formed on an element separation layer 2 separated by a semiconductor substrate such as Si, for example. area.

[0038] Gate electrode 3 also serves as figure 1 Address lines (eg, ...

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PUM

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Abstract

A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.

Description

technical field [0001] The present invention relates to a magnetic memory element and a manufacturing method of the magnetic memory element. The magnetic memory element is formed by stacking a plurality of perpendicular magnetization layers including a storage layer and a reference layer through non-magnetic substances, and passing an electric current between these layers The spin torque generated when flowing between the two reverses the magnetization to store information. Background technique [0002] In information devices such as computers, high-density DRAM (Dynamic Random Access Memory) operating at high speed is widely used as RAM (Random Access Memory). However, since DRAM is a volatile memory whose information is lost when power is turned off, a nonvolatile memory in which information is not lost is required. [0003] As a candidate of a nonvolatile memory, MRAM (Magnetic Random Access Memory), which stores information by magnetizing a magnetic material, has attrac...

Claims

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Application Information

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IPC IPC(8): H01L27/22H01L43/08H01L43/12G11C11/15
CPCG11C11/161G11C11/1675H10B61/22H10N50/10H10N50/01H10N50/80H01L29/66007H01L29/82
Inventor 大森广之细见政功别所和宏肥后丰山根一阳内田裕行
Owner SONY CORP