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Bandgap reference voltage source

A reference voltage source and reference voltage technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of large chip area of ​​the startup circuit, affecting system performance and stability, etc., to save layout area and increase layout Effect of area and power consumption and cost reduction

Inactive Publication Date: 2012-03-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the start-up circuit often occupies a relatively large chip area
At the same time, when the power supply voltage changes within a relatively large range, especially when the power supply voltage is very high, a large overshoot will be generated at the reference output terminal at the moment of startup, which seriously affects the performance and stability of the system.

Method used

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Embodiment Construction

[0019] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0020] The structural block diagram of bandgap reference voltage source of the present invention is as figure 2 As shown, it includes a start-up circuit, a PTAT current generation circuit and a reference voltage generation circuit, wherein the start-up circuit is connected with the PTAT current generation circuit and the reference voltage generation circuit respectively, the PTAT current generation circuit is connected with the reference voltage generation circuit, and the reference voltage generation The output of the circuit is used as the output VREF of the bandgap reference voltage source.

[0021] The schematic diagram of the actual circuit structure of the starting circuit is as follows: image 3 As shown, it includes the pulse generation unit, PMOS transistors MP1 and MP6, NMOS transistors MN1 and MN2, resistor R3, and capacitor C1. T...

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Abstract

The invention discloses a bandgap reference voltage source, which comprises a startup circuit, a proportional to absolute temperature (PTAT) current generating circuit and a reference voltage generating circuit. The startup circuit comprises an impulse generating unit, a p-channel metal oxide semiconductor (PMOS) pipe MP1, a PMOS pipe Mp6, an n-channel metal oxide semiconductor (NMOS) pipe MN1, an NMOS pipe MN2, a resistor R3 and a capacitor C1. The startup circuit adopts a digital circuit and a switch capacitor for startup so as to reduce area, save area of a board and lower cost. In a PTAT current generating circuit, no calculation amplifier is utilized so that the area of the board is saved and power consumption is lowered. Meanwhile, an overshoot release circuit is introduced to ensure input voltage can change in a wide range so that stability of reference output in a large power supply range can be ensured. Further, stability of a whole chip system is guaranteed. The release circuit is very simple and does not increase the area and the power consumption of the board.

Description

technical field [0001] The invention belongs to the technical field of power supplies, and in particular relates to the design of a bandgap reference voltage source. Background technique [0002] As an essential part of the integrated circuit, the reference provides bias current and reference voltage for the entire chip. The magnitude of the bias current determines the power consumption of the entire chip. At the same time, the error amplifier and comparator in the chip usually use the reference voltage as the reference voltage. The stability of the reference largely determines the realization of chip functions and performance. . [0003] The most common references used in integrated circuits are triode-based bandgap references. Such as figure 1 As shown, it is clamped by the error amplifier, and then a current proportional to the absolute temperature (Proportional to Absolute Temperature, PTAT) is generated through Q1, Q2 and R1. The PTAT current acts on R2, and the ban...

Claims

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Application Information

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IPC IPC(8): G05F1/56
Inventor 明鑫李强徐祥柱陈程周泽坤张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA