Method of applying up-conversion materials to crystalline silicon cell

A technology of conversion materials and crystalline silicon cells, applied in the field of solar cells, can solve the problems of lowering up-conversion efficiency, complex application process, harsh requirements, etc.
CN102386271AInactive Publication Date: 2012-03-21上海泰阳绿色能源有限公司

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
上海泰阳绿色能源有限公司
Publication Date
2012-03-21
Estimated Expiration
Not applicable · inactive patent
Patent Text Reader

Abstract

The invention relates to a method of applying up-conversion materials to crystalline silicon cell. 0-20wt% of the up-conversion materials are doped into the copolymer of ethylene and ethyl vinyl acetate (EVA) used for encapsulating the cell module, or doped into polyvinyl butyral (PVB). In the fabrication process of the cell module, the function of the doped up-conversion material will not be lost or greatly reduced due to the heat technical process. When sunlight penetrates through the copolymer of ethylene and ethyl vinyl acetate (EVA) or through the polyvinyl butyral (PVB) via a surface layer of ultra-white glass, near-infrared light can be converted into visible light; therefore, solar cells absorb more lights, so that the optoelectronic conversion efficiency of the solar cells can be improved; moreover, the complex process of applying the up-conversion spectrum materials will be greatly simplified.
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Description

technical field

[0001] The invention relates to a solar battery technology, in particular to a method for applying an up-conversion material to a crystalline silicon battery. Background technique

[0002] The theoretical maximum value of the photoelectric conversion efficiency of the widely used crystalline silicon solar cells is about 30%, and the actual conversion efficiency is about 20%. Under normal circumstances, the energy of the solar spectrum (AM1.5) reaching the ground is about 1000W / m 2 , the wavelength covers 200-2500nm. However, only sunlight with energy greater than the energy gap Eg>1.12eV of silicon solar cells and λ<1100nm can be absorbed (carrier thermalization will also reduce the efficiency of silicon cells), while λ>1100nm cannot be absorbed and utilized. How to absorb sunlight more fully and more reasonably and improve the photoelectric conversion efficiency of crystalline silicon solar cells is one of the focal issues of widespread concern at...

Claims

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