Pyroelectric infrared detector and preparation method thereof

A pyroelectric infrared and detector technology, which is applied in the field of infrared detection, can solve the problems of serious heat loss, insufficient material strength, and difficult thickness, and achieves the effects of strong influence ability, high material strength, and light heat loss.

Inactive Publication Date: 2012-03-28
ZHONGBEI UNIV
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  • Abstract
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Problems solved by technology

However, thin-film pyroelectric materials are not easy to process, the material strength is not enough, the thickness is not easy to achieve, the ability to resist the harsh external environment is weak, and the heat loss is relatively serious. It is relatively difficult to achieve industrialization process control.

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  • Pyroelectric infrared detector and preparation method thereof
  • Pyroelectric infrared detector and preparation method thereof
  • Pyroelectric infrared detector and preparation method thereof

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Embodiment Construction

[0024] In order to describe the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.

[0025] The invention discloses a pyroelectric infrared detector based on wafer bonding technology and a preparation method thereof. The bonding technology refers to a method of closely bonding two wafers that have been surface-treated to a certain degree of cleanliness and flatness without adding any adhesive. The main advantage of the wafer bonding technology is to overcome the interface defects, elastic stress and dislocation diffusion of the wafer during the growth process caused by the large thermal expansion coefficient difference and the large lattice coefficient mismatch difference to the whole material, so that different The materials stick together while preserving the integrity of the original wafer.

[0026] figure 1 It i...

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Abstract

The invention discloses a pyroelectric infrared detector implemented by a wafer bonding technology, and a preparation method for the pyroelectric infrared detector. The pyroelectric infrared detector comprises a silicon substrate (1), and a thermal insulating layer (2), a bonding layer (3), a pyroelectric material sheet (4), an upper electrode layer and an infrared absorption layer (7) which are arranged on the surface of the silicon substrate (1), wherein the thermal insulating layer (2) and the pyroelectric material sheet (4) are bonded through the bonding layer (3) in the preparation method. A pyroelectric wafer and the silicon substrate are combined and the completeness of the original wafer is ensured; and compared with a thin-film pyroelectric detector made of the same pyroelectric material, the pyroelectric infrared detector has the advantages of high processability, high material strength, simple achievement of thickness, high capacity of resisting influence of external serious environment, low heat loss and the like.

Description

technical field [0001] The invention relates to the technical field of infrared detection, in particular to a pyroelectric detector and a preparation method thereof. Background technique [0002] Pyroelectric infrared detector is a new type of thermal detector that has made great progress since the 1970s. It is a receiving device that uses the pyroelectric effect of certain materials to detect infrared radiation. Due to its low price, light weight, wide spectral response, fast response speed, uncooled room temperature, easy imaging, and high cost performance, it is widely used in military, industry, medical and health, scientific research, and environmental monitoring. One of the hotspots in the field of technology research. [0003] There are two key factors affecting the performance of infrared detectors: one is the structure of the detector unit, and the other is the performance of the pyroelectric material. The choice of pyroelectric materials is particularly importan...

Claims

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Application Information

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IPC IPC(8): G01J5/10
Inventor 梁庭杨玉华薛晨阳雷程杨绪军张文栋刘俊熊继军
Owner ZHONGBEI UNIV
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