Gilbert cell mixer with automatic optimal bias and harmonic wave control

A harmonic control and mixer technology, applied in the modulation and transformation of semiconductor devices with at least two electrodes, can solve the problems of power supply voltage reduction, unfavorable linearity performance of Gilbert mixing units, etc., and achieve area saving. Effect

Inactive Publication Date: 2012-03-28
FUDAN UNIV
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Problems solved by technology

With the continuous progress of the technology, the power supply voltage is continuously reduced,

Method used

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  • Gilbert cell mixer with automatic optimal bias and harmonic wave control
  • Gilbert cell mixer with automatic optimal bias and harmonic wave control
  • Gilbert cell mixer with automatic optimal bias and harmonic wave control

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Embodiment Construction

[0014] Firstly, the theory of linearity is analyzed in combination with the circuit of the present invention.

[0015] As mentioned earlier, the transconductance stage is the main nonlinear source of the Gilbert mixer unit, and we will analyze its nonlinear characteristics. The experimental sample is an NMOS tube with a size of 60 μm×0.13 μm under a 0.13 μm CMOS process. It should be noted that the present invention can be extended to CMOS processes with other feature sizes.

[0016] Under normal working conditions, the nonlinearity of the transconductor in the Gilbert mixer unit mainly comes from the nonlinearity of its transconductance. The leakage current of the transconductance can be expanded according to the nonlinearity of the transconductance, as shown in formula (1).

[0017] (1)

[0018] in, I DC is the DC bias current, g m(n) is the n-order expansion coefficient of the nonlinear transconductance, v gs is the gate-sourc...

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Abstract

The invention, which belongs to the radio frequency integrated circuit design technology field, more particularly relates to a Gilbert cell mixer with automatic optimal bias and harmonic wave control. The mixer comprises a basic Gilbert frequency mixing unit, an optimal bias circuit and a harmonic wave control circuit. The Gilbert frequency mixing unit consists of a transconductance level, a switch level, and a load level. The optimal bias circuit includes duplication or reduction with a same proportion of a transconductance-level device of the Gilbert frequency mixing unit, a resistor chain, and operational amplifiers, wherein weak currents flow through the resistor chain and the operational amplifiers form two feedback loops. A middle point of the resistor chain in the optimal bias circuit provides a direct current bias for a transconductance tube in the Gilbert frequency mixing unit. And the harmonic wave control circuit is composed of an adjustable active inductance and a harmonic wave control capacitor; and the harmonic wave control circuit is connected to a drain terminal of the transconductance tube of the Gilbert frequency mixing unit. According to the invention, accuracy of a generated optimal bias is optimized; and a secondary harmonic wave feedback effect is overcome. Besides, the Gilbert cell mixer with automatic optimal bias and harmonic wave control is suitable for application to a wireless communication transceiver circuit needing an active mixer with high linearity.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuit design, in particular to a high-linearity Gilbert mixer with improved automatic optimal bias and adjustable active inductance harmonic control. Background technique [0002] A mixer is one of the most basic building blocks in radio frequency integrated circuits. In transceiver circuits, frequency shifting is performed by mixers. Compared with passive mixers, active mixers can provide conversion gain to further suppress the noise of subsequent circuits. The Gilbert mixer unit can provide good isolation between the RF side and the LO side. Therefore, active mixers based on Gilbert mixing units are widely used. [0003] figure 1 For the classic Gilbert mixer unit, including the first and second NMOS transistors as transconductance stages NM1-NM2 , as the third to sixth NMOS transistors of the switching stage NM3 - NM6 , as the first and second load resistors of th...

Claims

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Application Information

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IPC IPC(8): H03D7/12
Inventor 胡嵩黄煜梅洪志良
Owner FUDAN UNIV
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