Vertical PNP device in SiGe BiCMOS technology and manufacturing method thereof

Abstract

The invention discloses a vertical PNP device in SiGe BiCMOS technology. The whole device is formed in a deep N well, a collecting zone is a two-dimensional L shaped structure formed by a low doped first P type ion implantation zone and a heavily doped second P type ion implantation zone, and is led out through a P type buried layer formed at a shallow slot field oxide bottom. The heavily doped second P type ion implantation zone can restrict broadening of base region width, thus series resistance of the collecting zone is reduced, and characteristic frequency of the device is raised. When the device is in normal working, the collecting zone and the deep N well are subjected to reversal of biasing, the low doped first P type ion implantation zone is fully consumed, and breakdown voltage of the device is raised. The invention also discloses a manufacturing method of the vertical PNP device in the SiGe BiCMOS technology. The method is compatible with production technology of an SiGe heterojunction bipolar transistor in the SiGe BiCMOS technology, and integration of the vertical PNP device and the SiGe heterojunction bipolar transistor can be realized.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a vertical PNP device in a silicon-germanium BiCMOS process, and also relates to a manufacturing method for a vertical PNP device in a silicon-germanium BiCMOS process. Background technique [0002] High-speed vertical PNP devices are important devices paired with high-speed SiGe heterojunction bipolar transistors (HBTs) in high-speed RF applications. Generally, the characteristic requirements for vertical PNP devices are that the breakdown voltage of the device is greater than 7 volts, and the characteristic frequency is greater than 20 GHz. Since the majority of carriers in the emitter and collector regions of vertical PNP devices are holes, the mobility is low, and this characteristic index is difficult to achieve. The high characteristic frequency requires high doping in the collector area of ​​the PNP device, but this will greatly reduce the bre...

AI Technical Summary

Problems solved by technology

Since the majority of carriers in the emitter and collector regions of vertical PNP devices are holes, the mobility is low, and this characteristic index is difficult to achieve

High characteristic frequency requires high doping in the collector area of ​​PNP devices, but this will greatly reduce the breakdown voltage of the device

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