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Tunneling field-effect transistor for inhibiting bipolar effect and preparation method thereof

A technology of tunneling field effect and transistor, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc. It can solve the problems of subthreshold current increase, bipolar leakage current increase, device performance degradation, etc., and achieve improved switching performance. Effects of current ratio, performance improvement, and suppression of bipolar effect

Active Publication Date: 2012-04-11
PEKING UNIV
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Problems solved by technology

When reducing the thickness of the gate oxide layer or using high-K materials, or when using narrow-bandgap semiconductors, the ambipolar effect (ambipolar behavior) will be obvious while improving the device performance, making the ambipolar leakage current (ambipolar leakage) ) increases, manifested as an increase in the subthreshold current, which will degrade the performance of the device

Method used

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  • Tunneling field-effect transistor for inhibiting bipolar effect and preparation method thereof
  • Tunneling field-effect transistor for inhibiting bipolar effect and preparation method thereof
  • Tunneling field-effect transistor for inhibiting bipolar effect and preparation method thereof

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Embodiment Construction

[0038] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0039] The bipolar effect of the tunneling field effect transistor is due to the generation of band-to-band tunneling current at the drain junction, which increases the subthreshold leakage current and degrades the performance of the transistor. The band-band tunneling current has a negative exponential relationship with the forbidden band width of the semiconductor. At the same time, the leakage current of the junction also has a negative exponential relationship with the forbidden band width. Therefore, using a semiconductor with a larger forbidden band width in the drain region can reduce the band-band tunneling current from the channel region to the drain region and the leakage current at the drain terminal junction in the off state. In the embodiment of the present invention, the source region and the channel region are semiconductor germanium w...

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Abstract

The invention discloses a tunneling field-effect transistor for inhibiting the bipolar effect and a preparation method thereof. In the tunneling field-effect transistor, a drain region and a channel region adopt different semiconductor materials; and the width of a forbidden band of the drain region is larger than that of the forbidden band of the channel region, so that the bipolar effect can beeffectively inhibited, the subthreshold leakage current of the device is reduced and simultaneously the on-state current of the device is not influenced. Therefore, the on-state current ratio of the device can be increased, the subthreshold slope of the device is also reduced and the performance of the device is very obviously improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a tunneling field effect transistor and a preparation method thereof. Background technique [0002] In the development of integrated circuit device technology, the size of the device is continuously reduced according to Moore's law, so that the integration density of the integrated circuit increases. However, the severe short channel effect and serious performance degradation caused by the shrinking channel length, especially the serious static power consumption problem caused by the increase of the subthreshold leakage current, make the traditional field effect transistor no longer be used as the future Candidates for next-generation devices. Therefore, the field is committed to seeking new device solutions, including new structures, new materials, and the like. The Tunneling Field Effect Transistor (TFET) is a new working mechanism device, which can ...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/08H01L21/336
Inventor 黄如邱颖鑫詹瞻黄芊芊
Owner PEKING UNIV
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