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Lithographic apparatus and detector apparatus

A lithography equipment and detector technology, applied in microlithography exposure equipment, optomechanical equipment, photometry and other directions, can solve problems such as poor EUV detection efficiency and accuracy

Inactive Publication Date: 2012-04-11
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] While EUV radiation can be detected in the same way (using a CCD array provided with a layer of scintillation material), EUV detection efficiency and / or accuracy will be poor

Method used

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  • Lithographic apparatus and detector apparatus
  • Lithographic apparatus and detector apparatus
  • Lithographic apparatus and detector apparatus

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Embodiment Construction

[0022] This specification discloses one or more embodiments that incorporate the features of this invention. The disclosed embodiments are merely exemplary of the invention. The scope of the present invention is not limited to these disclosed embodiments. The invention is defined by the appended claims.

[0023] The described embodiments and references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," etc. mean that the described embodiments may include particular features, structures, or characteristics, but each embodiment It may not be necessary to include specific features, structures or characteristics. Also, these paragraphs are not necessarily referring to the same embodiment. Furthermore, when particular features, structures or characteristics are described in conjunction with an embodiment, it should be understood that it is within the scope of knowledge of those skilled in the art to implement such features, structures or character...

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Abstract

A detector includes a layer of scintillation material, a layer of spacer material on the scintillation material, and a spectral purity filter layer on the spacer material. A detection method includes directing EUV radiation through a spectral purity filter layer, directing the EUV radiation through a spacer material layer provided beneath the spectral purity filter layer, directing the EUV onto a layer of scintillation material, and detecting scintillation radiation emitted by the scintillation material.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application No. 61 / 172,904, filed April 27, 2009, which is hereby incorporated by reference in its entirety. technical field [0003] The invention relates to a lithographic apparatus and a detector apparatus which may form part of a lithographic apparatus. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, the pattern is transferred by imaging t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G01J1/58
CPCG03F7/706G03F7/7085H01L27/14663
Inventor I·尼古拉伊夫M·维伦斯
Owner ASML NETHERLANDS BV