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Group-III nitride HEM (High Electron Mobility Transistor) device

A nitride and device technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as unsatisfactory effects

Inactive Publication Date: 2012-04-18
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Application Information

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Problems solved by technology

However, this method of suppressing current collapse is not ideal in the case of high current and high voltage

Method used

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  • Group-III nitride HEM (High Electron Mobility Transistor) device
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  • Group-III nitride HEM (High Electron Mobility Transistor) device

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Embodiment Construction

[0019] refer to Figure 2a The reason for the current collapse phenomenon of ordinary HEMT devices (taking AlGaN / GaN devices as an example) is that in the off state of the device, negative charges will be accumulated at the interface between the AlGaN layer 3 and the insulating dielectric layer 6 on both sides of the gate metal 4 to form negative charges In the accumulation region 21 , due to electrostatic induction, these negative charges will reduce or even completely deplete the two-dimensional electron gas in the lower channel region, forming a channel depletion region 22 . When the gate voltage rises and the device transitions from the off state to the on state, the two-dimensional electron gas under the gate rises under the control of the gate voltage, and the channel under the gate is turned on, but the negative charges in the interface charge accumulation region are relatively low The deep energy level cannot be released in time, so the two-dimensional electron gas in ...

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Abstract

The invention discloses a Group-III nitride HEM (High Electron Mobility Transistor) device which comprises a source electrode, a drain electrode, a main grid, an auxiliary grid, an insulating dielectric layer and a heterojunction structure; the source electrode and the drain electrode are electrically connected through two-dimension electron gas formed in the heterojunction structure; the heterojunction structure comprises a first semiconductor and a second semiconductor; the second semiconductor is formed on the surface of the first semiconductor and is provided with a band gap wider than the first semiconductor; the first semiconductor is arranged between the source electrode and the drain electrode; the main grate is arranged on the surface of the second semiconductor near one side of source electrode and is in schottky contact with the second semiconductor; the dielectric layer is formed on the second semiconductor and the surface of the main grid and is arranged between the source electrode and the drain electrode; the auxiliary grid is formed on the surface of the dielectric layer; at least one side edge of the auxiliary grid is extended toward the direction of the source electrode or the drain electrode; meanwhile, an orthographic projection of the auxiliary grid are overlapped with two side edges of the main grate. The Group-III nitride HEM device can fundamentally and effectively inhibit 'Current Collapse Effect'.

Description

technical field [0001] The invention relates to a high electron mobility transistor (High Electron Mobility Transistor, HEMT), in particular to a group III nitride HEMT device. Background technique [0002] When the HEMT device uses group III nitride semiconductors, due to the piezoelectric polarization and spontaneous polarization effects, a high-concentration two-dimensional electron gas can be formed on the heterostructure (Heterostructure), such as: AlGaN / GaN. In addition, HEMT devices use group III nitride semiconductors, which can obtain high insulation breakdown electric field strength and good high temperature resistance characteristics. HEMTs with group III nitride semiconductors with heterostructures can be used not only as high-frequency devices, but also as high-voltage / high-current power switching devices. [0003] When the existing Group III nitride semiconductor HEMT devices are used as high-frequency devices or high-voltage and high-power switching devices, ...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/78H01L29/423
Inventor 蔡勇于国浩董志华王越张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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