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Low voltage varistor ceramic material and preparation method thereof

A technology of varistor and ceramic materials, applied in varistor and other directions, can solve the problems of high potential gradient and unsuitable low-voltage varistor ceramics, etc., to reduce the potential gradient, reduce energy consumption, and reduce costs.

Inactive Publication Date: 2013-07-10
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example: the Chinese invention patent with application number 200910273178.2 discloses a ZnO-Bi 2 o 3 -TiO 2 It is a method of adding 0.4-3wt% bismuth-boron glass to varistor materials. The sintering temperature is 850-950°C, but the potential gradient is still as high as 210V / mm; The Chinese invention patent of the method of varistor material "[invention number: 200510110414.0], by adding Bi in ZnO 2 o 3 , Sb 2 o 3 、Cr 2 o 3 、Co 2 o 3 , MnO 2 and Y 2 o 3 and other rare earth oxides can be sintered at 800°C, but the prepared zinc oxide varistor ceramics are high potential gradient varistor materials, which are not suitable for the preparation of low-voltage varistor ceramics

Method used

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  • Low voltage varistor ceramic material and preparation method thereof
  • Low voltage varistor ceramic material and preparation method thereof
  • Low voltage varistor ceramic material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) Use the following raw material components and their content to prepare materials:

[0022] V 2 o 5 0.06 mol, 10.913 g

[0023] TiO 2 1.10 moles, 87.888 grams

[0024] ZnO 96.666 moles, 7866.582 grams

[0025] Bi 2 o 3 0.692 moles, 322.442 grams

[0026] co 2 o 3 0.988 moles, 163.873 grams

[0027] MnCO 3 0.494 mol, 56.783 g

[0028] where: V 2 o 5 : TiO 2 : ZnO-Bi 2 o 3 The molar ratio of the base is 0.06: 1.10: 98.84; ZnO-Bi 2 o 3 Basic composition ZnO: Bi 2 o 3 :Co 2 o 3 : MnCO 3 The molar ratio is 97.8 0 : 0.70 : 1.00 : 0.50.

[0029](2) Using absolute ethanol as solvent, the weighed ZnO, Bi 2 o 3 、Co 2 o 3 and MnCO 3 After the raw materials are mixed, ball mill at a rate of 280r / min for 13h in a ball mill, add V 2 o 5 and TiO 2 Then ball mill for 11h, take it out and bake at 100°C for 10h;

[0030] (3) The final powder after ball milling is...

Embodiment 2

[0036] (1) Use the following raw material components and their content to prepare materials:

[0037] V 2 o 5 0.07 mol, 12.731 g

[0038] TiO 2 1.00 moles, 79.898 grams

[0039] ZnO 96.951 moles, 7889.775 grams

[0040] Bi 2 o 3 0.594 moles, 276.778 grams

[0041] co 2 o 3 0.989 moles, 164.039 grams

[0042] MnCO 3 0.396 mol, 45.519 g

[0043] where: V 2 o 5 : TiO 2 : ZnO-Bi 2 o 3 The molar ratio of the base is 0.07: 1.00: 98.93; ZnO-Bi 2 o 3 Basic composition ZnO: Bi 2 o 3 :Co 2 o 3 : MnCO 3 The molar ratio is 98.00:0.60:1.00:0.4.

[0044] (2) Using absolute ethanol as solvent, the weighed ZnO, Bi 2 o 3 、Co 2 o 3 and MnCO 3 After the raw materials are mixed, ball mill at a rate of 260r / min for 14h in a ball mill, add V 2 o 5 and TiO 2 Then ball mill for 12 hours, take it out and bake at 120°C for 8 hours;

[0045] (3) The final powder after ball milling is p...

Embodiment 3

[0051] (1) Use the following raw material components and their content to prepare materials:

[0052] V 2 o 5 0.08 mol, 14.550 g

[0053] TiO 2 1.20 moles, 95.878 grams

[0054] ZnO 96.449 moles, 7848.923 grams

[0055] Bi 2 o 3 0.691 moles, 321.976 grams

[0056] co 2 o 3 1.086 moles, 180.127 grams

[0057] MnCO 3 0.494 mol, 56.783 g

[0058] where: V 2 o 5 : TiO 2 : ZnO-Bi 2 o 3 The molar ratio of the base is 0.08: 1.20: 98.72; ZnO-Bi 2 o 3 Basic composition ZnO: Bi 2 o 3 :Co 2 o 3 : MnCO 3 The molar ratio is 97.70:0.70:1.10:0.50.

[0059] (2) Using absolute ethanol as solvent, the weighed ZnO, Bi 2 o 3 、Co 2 o 3 and MnCO 3 After the raw materials are mixed, ball mill at a rate of 300r / min for 12h in a ball mill, add V 2 o 5 and TiO 2 Then ball mill for 10 hours, take it out and bake at 110°C for 9 hours;

[0060] (3) The final powder after ball milling i...

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Abstract

The invention discloses a low voltage varistor ceramic material and a preparation method thereof. The low voltage varistor ceramic material is realized by adding V2O5 and TiO2 simultaneously into a ZnO-Bi2O3 base low voltage varistor ceramic and sintered by a traditional ceramics. A material proportion is as below: a molar ratio of V2O5 to TiO2 to ZnO-Bi2O3 base is 0.05-0.08:0.80-1.30:98.62-99.15, wherein the ZnO-Bi2O3 base comprises components of ZnO, Bi2O3, Co2O3 and MnCO3, and a molar ratio of ZnO to Bi2O3 to Co2O3 to MnCO3 is 97.40-98.20:0.60-0.80:0.80-1.20:0.40-0.60. The invention has advantages of : (1) Ti doping can increase a nonlinear coefficient of a varistor ceramic material and reduce a potential gradient; (2) V doping can reduce a sintering temperature of the ceramic material, save energy consumption and lower cost; (3) pre-burning can enhance powder activity; (4) a technology of segment heating and insulation can enhance quality and performance of the ceramic, reduce energy consumption and save cost.

Description

technical field [0001] The invention relates to a piezoelectric ceramic material, in particular to a low-voltage varistor ceramic material and a preparation method thereof. Background technique [0002] ZnO varistor ceramics has become one of the most widely used and best performance varistor materials due to its high nonlinear coefficient, fast response speed, small leakage current, low residual voltage, and low manufacturing cost. It is widely used in electric power, Communications, transportation, integrated circuits, automotive electronics, medical equipment and household appliances and other fields. Before 1975, ZnO varistors were mainly used in lines with a working voltage above 110V. After that, low-voltage varistors began to be applied, and continued to develop towards low voltage and miniaturization. Its application fields are constantly expanding, and its market demand is currently increasing by Average annual growth rate of about 25%. [0003] At present, low-vo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/10C04B35/453C04B35/622
Inventor 王华巨锦华许积文袁昌来张小文
Owner GUILIN UNIV OF ELECTRONIC TECH
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