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Monitoring method of environmental magnetic shield of electronic scanning microscope

An environmental magnetic field, electronic scanning technology, applied in scanning probe technology, instruments, etc., can solve the problem of inability to effectively monitor the occasional environmental magnetic field, and achieve the effect of avoiding misjudgment

Active Publication Date: 2013-06-26
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method can monitor continuous environmental magnetic fields, but cannot effectively monitor sporadic environmental magnetic fields

Method used

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  • Monitoring method of environmental magnetic shield of electronic scanning microscope
  • Monitoring method of environmental magnetic shield of electronic scanning microscope

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Experimental program
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Embodiment Construction

[0028] The present invention will be further described below in combination with principle diagrams and specific operation examples.

[0029] Such as figure 1 , figure 2 Shown, the monitoring method of a kind of electron scanning microscope environmental magnetic field of the present invention, wherein, comprise the following steps:

[0030] Step 1: Scanning a silicon wafer with an electron scanning microscope to obtain a line pattern of the silicon wafer.

[0031] In this step, the selected line pattern can be any photoresist line pattern after polishing and development that needs to be measured, and can also be the substrate line pattern after etching.

[0032] Step 2: Select one side of one of the graphs 1 in the line graph, select multiple measurement points 2 and obtain the measurement data, and measure the point 3 corresponding to the measurement point on the other side of the line graph data collection.

[0033] In the implementation, the measurement data of each m...

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Abstract

The invention discloses a monitoring method of an environmental magnetic shield of an electronic scanning microscope, and the monitoring method comprises the following steps that a line drawing of a silicon wafer to be measured is selected; a plurality of measuring points are selected on one side of the line drawing, measuring data of the measuring points are collected, and measuring data of relative points of the measuring points are collected on the other side of the line drawing; first difference values among the measuring data of corresponding points on the two sides of the line drawing are calculated; the maximum difference value and the minimum difference value among the first difference values are obtained, and a second difference value between the maximum difference value and the minimum difference value is calculated and is used as a measuring result; the measuring result is recorded in an environmental magnetic shield influence control chart; and according to the measuring result recorded in the environmental magnetic shield influence control chart every time, a dynamic monitoring chart of the influence of the environmental magnetic shield is obtained. The invention provides the method for monitoring the environmental magnetic shield of the electronic scanning microscope by utilizing the line width and the line width roughness of the measured drawing.

Description

technical field [0001] The invention relates to a magnetic field detection method, in particular to a method for monitoring the environmental magnetic field of an electron scanning microscope. Background technique [0002] Modern large-scale integrated circuit manufacturing forms various device patterns on silicon wafers through photolithography and etching processes. As the critical dimensions of graphics continue to shrink, their accuracy is becoming increasingly demanding. Scanning electron microscope is an important instrument for measuring the key dimensions of graphics. Its principle is that when the controlled electron beam scans the surface of the object, different numbers of secondary electrons will be generated in different areas of the surface, and the secondary electrons collected can generate the measured graphics. Image. [0003] If there is interference from an external magnetic field, the scanning electron beam will be disturbed in the magnetic field, resul...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01Q30/18
Inventor 夏婷婷毛智彪马兰涛
Owner SHANGHAI HUALI MICROELECTRONICS CORP