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Method for manufacturing a metal microstructure and microstructure obtained according to said method

一种微观结构、金属的技术，应用在制造微观结构装置、微观结构装置、微结构技术等方向，能够解决几何尺寸离差增加等问题

Active Publication Date: 2012-05-16
NIVAROX FAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This leads to an increase in the geometric size dispersion in the die plane

Method used

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  • Method for manufacturing a metal microstructure and microstructure obtained according to said method
  • Method for manufacturing a metal microstructure and microstructure obtained according to said method
  • Method for manufacturing a metal microstructure and microstructure obtained according to said method

Examples

Experimental program
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Embodiment Construction

[0065] will refer to Figures 1a to 1h The first embodiment is described.

[0066] The substrate 1 used in step a) of the method according to the invention is formed, for example, from a silicon, glass or ceramic wafer on which a seed layer, ie a layer capable of starting the electroforming reaction, has been deposited by evaporation. Typically, the seed layer is formed by sub-layers of chromium layer 2 and gold layer 3 ( Figure 1a ).

[0067] Alternatively, the substrate may be made of stainless steel or another metal capable of initiating the electroforming reaction. In this case, the seed layers 2, 3 are no longer necessary. In the case of stainless steel substrates, clean the substrates before use.

[0068] The photosensitive resin 4 used in step b) of the method according to the invention is preferably an octafunctional epoxy-type resin available from the company Shell Chemical (under reference SU-8) and a photosensitive resin selected from triarylsulfide salt...

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Abstract

The invention relates to a method for manufacturing a plurality of metal microstructures characterised in that said method includes the following steps: a) obtaining a conductive substrate or an insulating substrate covered with a conductive seeding layer; b) applying a layer of photosensitive resin to the conductive portion of the substrate surface; c) flattening the surface of the layer of photosensitive resin to a desired thickness and / or surface state; d) irradiating the layer of resin through a mask defining the contour of the desired microstructure; e) dissolving the non-polymerised areas of the photosensitive resin layer to expose the conductive surface of the substrate at parts; f) galvanically depositing at least one layer of a metal from said conductive layer such as to form a block that substantially reaches the top surface of the photosensitive resin; g) flattening the resin and the electroformed metal in order to make the resin and the electroformed blocks level and thus to form electroformed parts or microstructures; h) separating the resin layer and the electrodeposited layer from the substrate; and i) removing the layer of photosensitive resin from the structure obtained at the end of step g) in order to release the microstructures thus formed.

Description

technical field [0001] The present invention relates to a method for producing metallic microstructures by LIGA-type techniques. In particular, the present invention relates to a method of this type for producing microstructures with more precise and better controlled dimensional features than prior art methods. The invention also relates to a metal part of this type obtained via this method. Background technique [0002] The LIGA (LithographieGalvanik Abformung, photolithography electroplating forming) technology developed by W. Ehrfeld of the Karlsruhe Nuclear Research Center in Germany in the 1980s has been proved to be beneficial to the manufacture of high-precision metal microstructures. [0003] The principle of the LIGA technique is that a photosensitive resin layer is deposited on a conductive substrate or a substrate coated with a conductive layer; X-irradiation is performed by means of a synchrotron through a mask matching the contour of a desired microstructure; ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D1/00B81C1/00
CPCB81C2201/032C25D5/022G03F7/0035B81C99/0085C25D1/00C25D1/003C25D1/20Y10T29/49124
Inventor A.富辛格
Owner NIVAROX FAR
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