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High- frequency power amplifier

A power amplifier and frequency technology, applied in the direction of high-frequency amplifiers, power amplifiers, amplifiers, etc., can solve the problems of insufficient power-added efficiency improvement and power-added efficiency reduction, and achieve the effect of reducing distortion and reducing power consumption

Inactive Publication Date: 2012-05-23
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0022] However, the inventors of the present application found a problem that the power added efficiency is significantly lowered when a field plate structure FET is used to increase the output of a high-frequency power amplifier.
Furthermore, there is a problem that the effect of improving the power-added efficiency cannot be sufficiently obtained even if the efficiency is improved by the F-class amplifier circuit.

Method used

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no. 1 approach

[0060] figure 1 A circuit diagram showing a high-frequency power amplifier according to the first embodiment of the present invention.

[0061] Such as figure 1 As shown, the high-frequency power amplifier according to the first embodiment of the present invention has: an input matching circuit 102 ; a transistor 104 which is an amplifying element; a reactance control circuit 107 ; and an output matching circuit 105 . Also, an input terminal 101 for a high-frequency signal is connected to an input side of the input matching circuit 102 , and a bias terminal 109 is connected to an output side of the input matching circuit 102 . A DC voltage for driving the transistor 104 is applied to the gate of the transistor 104 via a bias terminal 109 . In addition, a bias terminal 103 is connected to the input side of the output matching circuit 105 . A DC voltage for driving the transistor 104 is applied to the drain of the transistor 104 via the bias terminal 103 . Furthermore, an ...

no. 2 approach

[0100] Below, use Figure 10 A high-frequency power amplifier according to a second embodiment of the present invention will be described. Figure 10 It is a circuit diagram of a high-frequency power amplifier according to a second embodiment of the present invention.

[0101] The difference between the high-frequency amplifier of the second embodiment of the present invention and the high-frequency amplifier of the first embodiment is the configuration of the reactance control circuit 107 . That is, in this embodiment, the microstrip line 401 is used as the reactance control circuit 107 . In addition, other circuit structures are the same as those of the first embodiment, so that in Figure 10 neutralize figure 1 The same reference numerals are used for the same structural elements, and descriptions thereof are omitted.

[0102] In this embodiment, the reactance component of the microstrip line 401 constituting the reactance control circuit 107 can be adjusted by its lin...

no. 3 approach

[0104] Below, use Figure 11 A high-frequency power amplifier according to a third embodiment of the present invention will be described. Figure 11 It is a circuit diagram of a high-frequency power amplifier according to a third embodiment of the present invention.

[0105] The difference between the high-frequency amplifier of the third embodiment of the present invention and the high-frequency amplifier of the first embodiment is the configuration of the reactance control circuit 107 . That is, in the present embodiment, a series resonance circuit of an inductor 501 and a capacitor 502 is used as the reactance control circuit 107 . In addition, other circuit structures are the same as those of the first embodiment, so that in Figure 11 neutralize figure 1 The same reference numerals are used for the same structural elements, and descriptions thereof are omitted.

[0106] Here, when the resonant frequency is F, the parasitic capacitance of the transistor 104 is C, the ...

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Abstract

A radio frequency power amplifier having a transistor 104 that amplifies a radio frequency signal of a first frequency; an input matching circuit 102 connected to an input terminal of the transistor 104; an output matching circuit 105 connected to an output terminal of the transistor 104; and a reactance control circuit 107 with one end connected to the output terminal of the transistor 104, and the other end connected to an input terminal of an output matching circuit 105 and a bias terminal 103. The reactance control circuit 107 has a reactance which resonates at a second frequency with a parasitic capacitance of the transistor 104 at the output terminal of the transistor 104. The second frequency is identical or close to the first frequency.

Description

technical field [0001] The present invention relates to high-frequency power amplifiers, and in particular to high-efficiency technology for high-output high-frequency power amplifiers. Background technique [0002] A high-frequency power amplifier is a device that amplifies an input signal and outputs it, and is widely used in mobile communication terminals and base stations. However, the power consumption of high-frequency power amplifiers is very large, and almost all the power supply required to drive high-frequency generating circuits and signal transmission circuits is consumed by high-frequency power amplifiers, which has become an obstacle to low power consumption in mobile communication terminals and base stations. . As a result, the efficiency of the high-frequency power amplifier is increased, and the driving power is reduced. [0003] The input and output characteristics of high-frequency power amplifiers ensure a constant gain and amplify the input signal (lin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/24H03F1/02
CPCH03F2200/423H03F1/32H03F2200/15H03F1/56H03F2200/387H03F3/189H03F2200/108H03F3/193H03F2200/18H03F3/245H03F1/3205H03F2200/222H03F2203/7215H03F3/195H03F2200/391
Inventor 夘野高史八幡和宏石崎俊雄
Owner PANASONIC CORP
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