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Metal-oxide-metal capacitor structure

A technology of metal capacitors and oxides, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as limiting the application range of MOM capacitors, achieve the effects of reducing parasitic inductance and resistance, expanding application range, and reducing difficulty

Inactive Publication Date: 2012-06-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional MOM capacitors generally adopt a finger-like structure ( figure 1 As shown), in order to obtain a large capacitance value, it is necessary to increase the length of each finger and increase the number of inserted fingers. Increasing the length of each finger will increase the parasitic inductance and resistance of each finger, reducing the Q value of the capacitor at high frequencies (quality factor ), and the capacitance value will change significantly with the increase of frequency, which limits the application range of MOM capacitors

Method used

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  • Metal-oxide-metal capacitor structure
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  • Metal-oxide-metal capacitor structure

Examples

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Embodiment 1

[0033] The fishbone MOM capacitance structure in the present embodiment, as figure 2 As shown, the capacitance structure is as follows:

[0034] On the same layer of metal (the material of the same layer of metal can be aluminum, copper, etc.), the first electrode (anode or cathode) of the fishbone MOM capacitor is made of the first group of metals that are parallel to each other, have equal lengths, and are aligned at the ends. (the material of the metal strip can be aluminum, copper, etc.), and the first group of parallel and equal metal strips is a metal strip perpendicular to it (the first group of metal strips) [the material of the metal strip can be Aluminum, copper, etc.] connection, the connection point is located at the midpoint of the parallel metal strips; the parallel metal strips can form an axisymmetric figure, and the symmetrical axis is the line connecting the midpoints of each metal strip;

[0035] On the same layer of metal, the second electrode (cathode or...

Embodiment 2

[0042] The stacked MOM capacitor structure (such as Figure 9 shown), similar to Example 1, but wherein, the structure and the repeating unit of the same layer of metal are changed to:

[0043] On the same layer of metal, the first electrode of the capacitor is composed of a stack of metal strips;

[0044] On the same layer of metal, the second electrode of the capacitor is composed of a metal strip that forms an interdigitated structure with the first electrode of the capacitor;

[0045] On the same layer of metal, the second electrode of the capacitor surrounds the first electrode in a ring, and the ring can be a closed ring or an open ring;

[0046] Using the structure described above as the smallest repeating unit to form a capacitive structure, such as Figure 10 , Figure 11 shown.

[0047] The MOM capacitor structure in this embodiment can be formed by a multi-layer metal (eg, 6-layer) structure, and the material, pattern, capacitor polarity and connection relations...

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Abstract

The invention discloses a metal-oxide-metal capacitor structure. The capacitor structure is characterized in that on the same-layer metal, a first electrode of a capacitor consists of a first group of metal strips which are mutually parallel, and the first group of metal strips which are mutually parallel are connected with a metal strip vertical to the first group of metal strips which are mutually parallel; or the first electrode of the capacitor consists of a stack-shaped metal strip; on the same-layer metal, a second electrode of the capacitor consists of a second group of metal strips which form an interpolation structure with the first electrode of the capacitor; and the same-layer metal structure is a minimum repeating unit so as to form an MOM (Metal-Oxide-Metal) capacitor structure. According to the metal-oxide-metal capacitor structure, by utilization of a symmetric structure, the parasitic inductance and resistance of pole plates at the two ends of the MOM capacitor are effectively reduced, and the application range of the MOM capacitor is expanded; and simultaneously, the structure is used as a unit, and the capacitor with large capacitance is formed by utilizing repeated parallel connection of the unit structures, so that the difficulty in establishing a radio-frequency MOM capacitance model is reduced.

Description

technical field [0001] The invention relates to a structure of a radio frequency device, in particular to a metal-oxide-metal (MOM) capacitance structure. Background technique [0002] MOM capacitors are one of the important components of RF CMOS (Complementary Metal Oxide Semiconductor) or BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) integrated circuits, and are widely used in RF circuit modules such as voltage-controlled oscillators. [0003] Traditional MOM capacitors generally adopt a finger-like structure ( figure 1 As shown), in order to obtain a large capacitance value, it is necessary to increase the length of each finger and increase the number of inserted fingers. Increasing the length of each finger will increase the parasitic inductance and resistance of each finger, reducing the Q value of the capacitor at high frequencies (quality factor ), and the capacitance value will change significantly with the increase of frequency, which limits the applicat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522
Inventor 周天舒王生荣
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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