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Semiconductor material of Cu2O porous micro/nano cube and preparation method thereof

A nano-cube, semiconductor technology, applied in the direction of nanotechnology, can solve the problems of low cost, high cost, low success rate, etc.

Inactive Publication Date: 2012-06-20
EAST CHINA NORMAL UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention solves the problems of high cost and low success rate in the preparation method of semiconductor materials with micron / nanoscale porous structure in the prior art, and proposes a Cu 2 O the preparation method of the semiconducting material of porous micron / nano cube structure, it has the advantage such as output is large, cost is low, repeatability is high

Method used

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  • Semiconductor material of Cu2O porous micro/nano cube and preparation method thereof
  • Semiconductor material of Cu2O porous micro/nano cube and preparation method thereof
  • Semiconductor material of Cu2O porous micro/nano cube and preparation method thereof

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Embodiment 1

[0032] 1. Clean the silicon wafer, and then cut it into small pieces of about 5mm×5mm;

[0033] 2. Set the temperature of the heating furnace to 180°C;

[0034] 3. Mix absolute ethanol and deionized water in a ratio of 1:3 and stir evenly as a solvent for later use;

[0035] 4. Add 0.5g of Cu(CH3 COO) 2 ·H 2 O powder was added to 100mL of the above-mentioned mixed solvent of absolute ethanol and deionized water to make Cu(CH 3 COO) 2 ·H 2 O content is the mixed solution of 25mM; Cu(CH 3 COO) 2 ·H 2 The O content allows an error of up and down 2.5mM, which has no effect on the reaction result;

[0036] 5. After stirring for about 5 minutes, add 1 mL of pyrrole dropwise to the above solution while stirring, Cu(CH 3 COO) 2 ·H 2 The molar ratio of O powder to pyrrole is 2:7, and the prepared reaction solution is light blue;

[0037] 6. Clean the Teflon reactor with a capacity of 100mL, place the cleaned silicon wafer horizontally on the bottom of the inner tank of the ...

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Abstract

The invention discloses a semiconductor material of a Cu2O porous micro / nano cubic structure. The semiconductor material comprises a silicon wafer substrate and a Cu2O crystal with the micro / nano cubic structure deposited on the surface of the silicon wafer substrate, wherein the Cu2O crystal with the micro / nano cubic structure comprises a cubic structure and a nanoscale branch growing on the surface of the Cu2O crystal. The invention further discloses a preparation method of the semiconductor material of the Cu2O porous micro / nano cubic structure. In the preparation method, the semiconductor material is prepared by taking a mixture of absolute ethyl alcohol and water as a solvent and taking Cu(CH3COO)2.H2O and pyrrole as raw materials with a hydrothermal method. The preparation method disclosed by the invention has the advantages of high yield, low cost, high repeatability, and the like. The semiconductor material has a special appearance and a large specific surface area in an entire structure, and is suitable for sensor application; and the nanoscale branch structure on the surface of the Cu2O crystal has a large aspect ratio, has contribution to point discharge, and is suitable for devices such as field-emission devices and the like.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials, semiconductor materials and devices, in particular, the invention relates to a Cu 2 O Porous micro / nano cube structure semiconductor material and preparation method thereof. Background technique [0002] Cu 2 O is a p-type semiconductor material with a direct bandgap of about 2.17eV, and has many unique electrical, optical and magnetic properties, so it is used in solar energy conversion, photocatalysis, sensors, antibacterial, lithium battery electrodes, etc. field has a wide range of applications. [0003] In the past few decades, people have prepared various Cu 2 O nanostructures, such as nanowires, cubes, octahedrons, dodecahedrons, hexahedrons, hollow spheres, etc., and various optoelectronic properties of these nanostructures have been studied. In recent years, the research focus is mainly on Cu 2 The controlled growth of O morphology can achieve large-scale production...

Claims

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Application Information

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IPC IPC(8): C04B41/50B82Y40/00
Inventor 石慧郁可朱自强
Owner EAST CHINA NORMAL UNIV
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