Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Defect detection device for mask plate

A defect detection and mask technology, applied in the direction of optical testing flaws/defects, etc., can solve the problem of time-consuming, difficult to find the subtle organic contamination of the mask, etc.

Inactive Publication Date: 2012-06-27
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF5 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is very time-consuming and difficult to detect fine organic contamination on the mask

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Defect detection device for mask plate
  • Defect detection device for mask plate
  • Defect detection device for mask plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0016] According to an embodiment of the present invention, the light source projection device further includes an incident angle adjustment mechanism for adjusting the incident angle of the light beam. When the incident angle of the light beam changes, its reflected light intensity and transmitted light intensity will change accordingly, and then the reflectivity and transmittance of the mask plate to the light beam will also change.

[0017] According to another embodiment of the present invention, according to a preferred embodiment of the present invention, the light source 11 is a tunable laser that emits a laser beam with a variable wavelength, and the wavelength of the laser beam emitted by the tunable laser is 157nm, 193nm, 248nm or 257nm .

[0018] According to another embodiment of the present invention, the light source 11 is a halogen light source, and the emitted light beam can be adjusted to have a wavelength range of 120nm to 800nm ​​through a filter.

[0019] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a defect detection device for a mask plate, which comprises a light source projection device and a detection system. The light source projection device comprises a light source and a lens, the light source is used for emitting light beams which are projected onto the mask plate through the lens, and the detection system comprises a plurality of light strength detectors and used for measuring and calculating at least one of the reflectivity or the transmissivity of the light beam and comparing the reflectivity or the transmissivity of the light beam with established detection standard in advance. By means of the structure, the defect detection device for the mask plate can quickly and effectively detect haze deflects and subtle organic pollutants on the mask plate.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, to a mask plate defect detection device. Background technique [0002] During the photolithography of silicon wafers using a photomask, ions in the environment tend to form attachments on the mask plate, which affects the exposure beam. When the mask is irradiated by the laser of the lithography machine for a certain period of time, especially under the irradiation of a light source with a wavelength of 193nm or below, so-called haze defects (haze) will gradually be generated on the mask. Ammonium sulfate compound is considered to be the main component of haze defects, and the residual ions after photomask cleaning are considered to be the main cause of haze defects. The presence of haze defects on the mask will cause photolithographic defects, which will lead to a decrease in product yield. Therefore, it is very important to find out the defects of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N21/88
Inventor 朱骏张旭昇
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products