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Process chamber and method for deglue removal of semiconductor silicon wafer

A process chamber, semiconductor technology, applied in the direction of cleaning methods using liquids, semiconductor/solid-state device manufacturing, chemical instruments and methods, etc., to achieve the effect of improving process production efficiency

Active Publication Date: 2016-04-06
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to propose a process chamber and method for degumming semiconductor silicon wafers to solve the problem of effectively combining dry degumming and wet cleaning in the same process chamber

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  • Process chamber and method for deglue removal of semiconductor silicon wafer
  • Process chamber and method for deglue removal of semiconductor silicon wafer
  • Process chamber and method for deglue removal of semiconductor silicon wafer

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Embodiment Construction

[0029] The degumming process chamber and degumming method for semiconductor silicon wafers proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0030] Please refer to figure 1 , figure 2 , figure 1 Shown is a schematic cross-sectional view of the structure of the semiconductor silicon wafer degumming process chamber structure in a preferred embodiment of the present invention; figure 2 Shown is a cross-sectional schematic diagram of a top view structure of a semiconductor silicon wafer deglue process chamber according to a preferred embodiment of the ...

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Abstract

The invention provides a photoresist stripping technical cavity for a semiconductor silicon wafer, which adopts the structure that a bottom platform bearing a silicon wafer is arranged at one end of the interior of the technical cavity; a plurality of lifting columns are uniformly distributed around the bottom platform; flexible elements are arranged at the top parts of the lifting columns; a protective shield is fixed on the other end of the interior of the technical cavity and is internally provided with a plasma generating device; a rotary platform and a movable cover plate are also arranged in the technical cavity; the silicon wafer is fixed above the rotary platform which can move up and down; the rotary platform and the protective shield can form a closed structure; the moveable cover plate can be placed above the bottom platform for shielding the wafer; and one or a plurality of inlet(s) is (are) formed on the moveable cover plate. The invention also provides a photoresist stripping method for the semiconductor silicon wafer. According to the photoresist stripping technical cavity and the photoresist stripping method, two silicon wafers can be subjected to dry etching and wet etching at the same time, thereby greatly improving the production efficiency.

Description

technical field [0001] The invention relates to the technical field of integrated circuit technology, in particular to a semiconductor silicon chip degumming chamber and degumming method. Background technique [0002] With the continuous progress of integrated circuit manufacturing technology, the volume of semiconductor devices is becoming smaller and smaller, which also leads to very small particles becoming enough to affect the manufacturing and performance of semiconductor devices, so the silicon wafer cleaning process has also become more and more important. [0003] In all cleaning steps, due to the implantation or etching process, a carbonized hard shell is formed on the surface of the photoresist, which is difficult to remove by conventional wet cleaning methods. Photoresist stripping is the most difficult step. A common method is to first treat the photoresist with oxygen plasma, and then use a wet cleaning process to remove the residual photoresist. For 130nm an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L21/02B08B3/00
Inventor 张晨骋
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT