Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Inductor and method for forming same

A technology of inductance and inductance coil, applied in the field of high-Q-value inductance and formation, can solve the problem of increasing process steps, and achieve the effects of reducing dielectric constant, increasing Q value, and reducing parasitic capacitance

Active Publication Date: 2012-06-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF10 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the Q value can only be improved slightly by adding the substrate shielding layer, and an additional process is required to form the substrate shielding layer, which increases the process steps

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inductor and method for forming same
  • Inductor and method for forming same
  • Inductor and method for forming same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] As mentioned in the background technology, how to realize a sufficiently high Q value inductor in the semiconductor manufacturing process is a big problem. In the prior art, the methods to improve the Q value of the inductor are mostly changing the characteristics and structure of the substrate material, increasing the substrate shielding, etc. , but because changing the substrate material requires changing the manufacturing process, adding a substrate shielding layer can only slightly increase the Q value, and requires additional processes to form the substrate shielding layer, all of which have their own shortcomings.

[0035] Therefore, the inventor has found through research that the planar spiral inductor is generally realized by forming a single-layer or multi-layer spiral metal wire on the interlayer dielectric layer on the surface of the semiconductor substrate by CMOS technology, and the single-layer or multi-layer spiral metal wire is used as the inductor Coil,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an inductor and a method for forming the same. The inductor comprises a substrate, a low-k interlayer dielectric layer, an inductance coil and a protection layer, wherein the inductance coil is positioned on the low-k interlayer dielectric layer which is arranged on the surface of the substrate, and the protection layer is arranged on the surface of the inductance coil. Since the low-k interlayer dielectric layer is an interlayer dielectric layer between the semiconductor substrate and the inductance coil, dielectric constant between the inductance coil and the substrate is reduced, parasitic capacitance between the substrate and the inductance coil is reduced, and accordingly Q value of the inductor can be increased.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to an inductor with a high Q value and a forming method. Background technique [0002] Passive components such as inductors, resistors, and capacitors play a very important role in integrated circuits. For example, in a CMOS radio frequency integrated circuit (RFIC), an inductor is a very necessary electrical device. However, the process of integrating inductive devices in integrated circuits is relatively difficult. Most of the inductances formed on integrated circuits in the prior art are planar spiral inductors, which are the most difficult components to integrate in passive devices. Moreover, in order to improve the performance of the inductor, improve the reliability of the RF module circuit and the efficiency of the circuit design, the integrated circuit needs an inductor with a high Q (quality factor) value. How to realize an inductor with a sufficiently high Q value...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/64H01L21/02
CPCH01L2924/0002
Inventor 林益梅
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com