Inductor and method for forming same

A technology of inductance and inductance coil, applied in the field of high-Q-value inductance and formation, can solve the problem of increasing process steps, and achieve the effects of reducing dielectric constant, increasing Q value, and reducing parasitic capacitance

Active Publication Date: 2012-06-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Application Information

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Problems solved by technology

[0004] However, the Q value can only be improved slightly by adding the substrate shielding layer, and a

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  • Inductor and method for forming same
  • Inductor and method for forming same
  • Inductor and method for forming same

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Embodiment Construction

[0034] As mentioned in the background technology, how to realize a sufficiently high Q value inductor in the semiconductor manufacturing process is a big problem. In the prior art, the methods to improve the Q value of the inductor are mostly changing the characteristics and structure of the substrate material, increasing the substrate shielding, etc. , but because changing the substrate material requires changing the manufacturing process, adding a substrate shielding layer can only slightly increase the Q value, and requires additional processes to form the substrate shielding layer, all of which have their own shortcomings.

[0035] Therefore, the inventor has found through research that the planar spiral inductor is generally realized by forming a single-layer or multi-layer spiral metal wire on the interlayer dielectric layer on the surface of the semiconductor substrate by CMOS technology, and the single-layer or multi-layer spiral metal wire is used as the inductor Coil,...

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Abstract

The invention discloses an inductor and a method for forming the same. The inductor comprises a substrate, a low-k interlayer dielectric layer, an inductance coil and a protection layer, wherein the inductance coil is positioned on the low-k interlayer dielectric layer which is arranged on the surface of the substrate, and the protection layer is arranged on the surface of the inductance coil. Since the low-k interlayer dielectric layer is an interlayer dielectric layer between the semiconductor substrate and the inductance coil, dielectric constant between the inductance coil and the substrate is reduced, parasitic capacitance between the substrate and the inductance coil is reduced, and accordingly Q value of the inductor can be increased.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to an inductor with a high Q value and a forming method. Background technique [0002] Passive components such as inductors, resistors, and capacitors play a very important role in integrated circuits. For example, in a CMOS radio frequency integrated circuit (RFIC), an inductor is a very necessary electrical device. However, the process of integrating inductive devices in integrated circuits is relatively difficult. Most of the inductances formed on integrated circuits in the prior art are planar spiral inductors, which are the most difficult components to integrate in passive devices. Moreover, in order to improve the performance of the inductor, improve the reliability of the RF module circuit and the efficiency of the circuit design, the integrated circuit needs an inductor with a high Q (quality factor) value. How to realize an inductor with a sufficiently high Q value...

Claims

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Application Information

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IPC IPC(8): H01L23/64H01L21/02
CPCH01L2924/0002
Inventor 林益梅
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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