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e/LQFP (low-profile quad flat package) stacked package with grounded ring and production method of e/LQFP stacked package with grounded ring

A production method and grounding ring technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, electrical components, etc., can solve the problems of easy-to-scan delamination, large chip bonding, non-stick carrier silver plating area, etc. Problems, to achieve the effect of improving reliability and test yield, increasing binding force, high reliability and test yield

Active Publication Date: 2012-06-27
TIANSHUI HUATIAN TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the above-mentioned problems in the prior art, the object of the present invention is to provide an eLQFP stacked package with a grounding ring, which solves the problems of the existing eLQFP package that the chip is larger and the wire is not sticky and the chip is smaller. The silver zone is prone to the problem of scanning detachment

Method used

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  • e/LQFP (low-profile quad flat package) stacked package with grounded ring and production method of e/LQFP stacked package with grounded ring
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  • e/LQFP (low-profile quad flat package) stacked package with grounded ring and production method of e/LQFP stacked package with grounded ring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] The wafer is thinned by the existing process method to obtain a thinned wafer with a final thinned thickness of 150 μm; during the thinning process, the rough grinding speed is 5 μm / s, and the thickness of the wafer after rough grinding is 200 μm + film thickness; The fine grinding speed is 0.5μm / s, and the thickness of the wafer after fine grinding is the final thinning thickness of the wafer + the thickness of the adhesive film. The process of preventing chip warpage is adopted during thinning. Use DISC 3350 dicing machine for scribing; when scribing, control the scribing feed speed to ≤10mm / s, and use anti-fragmentation and anti-crack scribing process software control technology;

[0082] The difference between the side length of the first IC chip 11 and the side length of the second IC chip 16 is greater than 1.2mm. Two times of core loading and one baking are adopted: when the core is loaded for the first time, a lead frame with a grounding ring is used, and the lea...

Embodiment 2

[0084] The wafer is thinned by the existing process method to obtain a thinned wafer with a final thinned thickness of 200 μm; during the thinning process, the rough grinding speed is 3 μm / s, and the thickness of the wafer after rough grinding is 250 μm + film thickness; The fine grinding speed is 0.75μm / s, and the thickness of the wafer after fine grinding is the final thinning thickness of the wafer + the thickness of the adhesive film. , control the scribing feed speed ≤ 10mm / s, and adopt anti-fragmentation, anti-crack scribing process software control technology. The difference between the side length of the first IC chip 11 and the side length of the second IC chip 16 is equal to 1.2mm. Two times of core loading and one baking are adopted: when the core is loaded for the first time, a lead frame with a ground ring is used, and the lead frame with the ground ring is used. The lead frame is sent to the feeding table, and the chip bonder grabs a lead frame and sends it into ...

Embodiment 3

[0086] The wafer is thinned by the existing process method to obtain a thinned wafer with a final thinning thickness of 180 μm; during the thinning process, the rough grinding speed is 4 μm / s, and the thickness of the wafer after rough grinding is the final thinning thickness of the wafer. Thickness + adhesive film thickness + 50μm; fine grinding speed 1.0μmum / s, the wafer thickness after fine grinding is the final wafer thinning thickness + adhesive film thickness, and the chip warpage prevention process is adopted during thinning. A-WD-300TXB dicing machine is used for scribing; when scribing, the scribing feed speed is controlled to be ≤10mm / s, and the anti-fragment and anti-crack scribing process software control technology is adopted. The difference between the side length of the first IC chip 11 and the side length of the second IC chip 16 is less than 1.2 mm. Two times of core loading and two times of baking are used: when the first core is loaded, a lead frame with a gr...

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Abstract

The invention discloses an e / LQFP (low-profile quad flat package) stacked package with a grounded ring and a production method of the e / LQFP stacked package with the grounded ring. Two IC (integrated circuit) chips are adhered to a carrier in a stacked manner and connected with an inner pin through bonding wires, the inner pin is connected with an outer pin, the carrier is connected with the grounded ring through a ribbed plate, and the lower end face of the grounded ring is higher than the upper end face of the carrier. The lower end face of the carrier is provided with an anti-overflow ring, the grounded ring, the bonding wires, the ribbed plate and the inner pin are packaged in a plastic packaging part, the lower end face of the carrier is packaged in the plastic packaging part or positioned outside the plastic packaging parte. A wafer is thinned and scribed prior to being subjected to coring, bonding, plastic packaging and subsequent procedures to produce the e / LQFP stacked packaging part with the grounded ring. The carrier of the stacked packaging part is free of ground wire, layering caused by stress generated by making the ground wire and bonding failure of the ground wire can be avoided, and thereby reliability and testing yield of the package are improved.

Description

technical field [0001] The invention belongs to the technical field of electronic information component manufacturing, and relates to an e / LQFP stack package with a grounding ring, and also relates to a production method of the stack package. Background technique [0002] Since the 1980s, electronic products have developed in the direction of multi-functionality, thinness and shortness, and the requirements for high-speed and high-density packaging technology have been put forward. Therefore, SMT packaging has been developed. The representative forms of SMT packaging are: PLCC, SOP, SOJ, TSOP, TSSOP, PQFP, QFJ, LQFP, TQFP, etc. [0003] LQFP (LOW-Profile Quad package) is a square flat packaging technology (QFP) with a package height of 1.4mm. It is suitable for thin product packaging with high density and fine pitch. It belongs to the packaging technology of mid-range products. It is often used in CP packaging and is easy to operate. , high reliability, small size, small pa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/00H01L23/495H01L23/31H01L21/60H01L21/56
CPCH01L2224/32145H01L2224/48145H01L2224/73265H01L2224/32245H01L2224/48247H01L24/73H01L2224/45144H01L2224/45147H01L2224/48091H01L2924/14H01L2924/181H01L2924/00012H01L2924/00014H01L2924/00
Inventor 李习周慕蔚郭小伟李存满
Owner TIANSHUI HUATIAN TECH
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