Self-rectifying resistance random access memory with cross array structure and preparation method
A technology of resistive memory and cross array, which is used in semiconductor devices, electric solid state devices, electrical components, etc.
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[0040] Figure 5 is prepared figure 2 Flow chart of the preparation method of the shown memory; Figure 5 , the present invention also discloses a preparation method for preparing the memory, comprising the following steps:
[0041] S1: Ion implantation of elements used to form heavily doped silicon on the silicon substrate;
[0042] S2: forming the nanocolumn at the heavily doped silicon formed in step S1 by photolithography;
[0043] S3: On the basis of step S2, deposit the material of the resistive switching oxide layer by a deposition method;
[0044] S4: On the basis of step S3, use etching technology to remove the excess material of the resistive oxide layer, and only retain the resistive oxide layer around the sidewall of the nano-column;
[0045] S5: forming an isolation layer by a deposition method;
[0046] S6: Form a metal layer by using a deposition method, and return to step S5 until a preset number of times is performed.
Embodiment 1
[0048] attached Figure 6 show figure 2 Schematic diagram of the fabrication method of the shown memory. First, ion-implant B, N, P, As and other elements on a lightly doped silicon substrate to form heavily doped n-type silicon or heavily doped p-type silicon, with a doping concentration of 10 18 ~10 20 cm -3 , the doped region is a part from the upper surface of the silicon substrate to a depth of 0.5-5um. Then use photolithography and etching technology to carve neatly arranged circular or square silicon nano-columns, the diameter or side length of the nano-columns is 5-50 nm, and the length is equal to the depth of the doped region. Then use a good conformal deposition method on the structure, such as atomic layer deposition (ALD) to deposit a resistive material, which can be selected from HfO 2 , NiO, TiO 2 , ZrO 2 , ZnO, WO 3 、 Ta 2 o 5 、Al 2 o 3 , CeO 2 , La 2 o 3 、Gd 2 o 3 It is composed of a material in the group formed by any combination thereof, an...
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