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Photoelectric synaptic device array, preparation method thereof and image processing equipment

A synaptic device, photoelectric technology, applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve problems such as crosstalk, leakage current crosstalk, circuit leakage current crosstalk, etc., to achieve enhanced conductance, improved efficiency and power consumption, and small size Effect

Active Publication Date: 2021-12-14
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, a related technology is to use memristors and photoelectric synapses at both ends to solve the problem of efficiency and power consumption in the process of graphics processing, but the main problem of devices at both ends is the crosstalk problem of leakage current in the circuit
In order to solve the crosstalk problem of the leakage current in the circuit, another related technology adopts a transistor or a diode or a gate transistor connected in series for each synaptic device in a cross-array of memristors or photoelectric synapses. The crosstalk problem of leakage current in the array is solved, but the redundant devices in series increase the complexity of the process

Method used

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  • Photoelectric synaptic device array, preparation method thereof and image processing equipment
  • Photoelectric synaptic device array, preparation method thereof and image processing equipment
  • Photoelectric synaptic device array, preparation method thereof and image processing equipment

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preparation example Construction

[0065] The present disclosure provides a method for preparing a photoelectric synapse device array, including the following steps:

[0066] S210, preparing a bottom electrode on the substrate.

[0067] Specifically, select a substrate, such as Si / SiO polished on one side 2 The substrate was first cleaned with a mixed solution of concentrated sulfuric acid and hydrogen peroxide for 30 minutes, then ultrasonically oscillated with acetone, ethanol, and deionized water at 75% power for 5 minutes, and then dried with nitrogen to clean the surface of the substrate. Clean up.

[0068] The bar-shaped bottom electrode is prepared on the cleaned substrate by photolithography, DC sputtering process and lift-off process. in:

[0069] The photolithography process specifically includes the following operations: spin-coat negative resist on the substrate (for example, 6000rpm, 20s), and then go through pre-baking (for example, 110°C, 2min), UV exposure (for example, 300W, 30s), post-bakin...

Embodiment

[0089] In this embodiment, using as Figure 1A and Figure 1B The shown photoelectric synapse device array structure, specifically, the photoelectric synapse device array includes a substrate 1, a bar-shaped bottom electrode 2, a P-type semiconductor layer 3 and an N-type semiconductor layer stacked on the bottom electrode 2 in sequence. 4. The light absorbing layer 5 and the transparent bar-shaped top electrode 6 . The materials of each layer are: substrate 1 is Si / SiO 2 , the horizontal rod-shaped bottom electrode 2 is Ti / Pt, and the P-type semiconductor layer 3 is NiO y , N-type semiconductor layer 4 is WO 3-z , The light absorbing layer 5 is ITO with a high degree of oxidation x The material, the bar-shaped top electrode 6 is ITO. Based on the above structure, the photoelectric synapse device array (Pt / NiO y / WO 3-z / ITO x / ITO), where each intersection forms a single optoelectronic synapse device unit (Pt / NiO y / WO 3-z / ITO x / ITO).

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Abstract

The invention provides a photoelectric synapse device array and a preparation method thereof, and image processing equipment. The photoelectric synapse device array comprises a bottom electrode; a P-type semiconductor layer, an N-type semiconductor layer, a light absorption layer and a transparent top electrode which are sequentially stacked on the bottom electrode, wherein the top electrode and the bottom electrode keep a vertical crossing structure, and each crossing point forms an independent photoelectric synapse device unit.

Description

technical field [0001] The disclosure relates to the field of photoelectric synapse devices, in particular to a photoelectric synapse device array, a preparation method thereof, and an image processing device. Background technique [0002] The existing imaging technology is based on a three-step task processing process of image imaging, data storage and information processing. However, the three steps of graphic imaging, data storage and information processing are transmitted multiple times through the circuit bus in traditional devices, which makes the image processing process have many problems in terms of efficiency and power consumption. [0003] Along with the research on artificial synapses, related technologies try to combine memristors and photoelectric synapses for image processing, so as to improve the efficiency of the image processing process and reduce power consumption. [0004] At present, a related technology is to use two-terminal memristors and photoelectr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/10H01L31/0216G06N3/067
CPCH01L31/10H01L31/02161G06N3/0675
Inventor 程传同张恒杰黄北举张欢陈润黄宇龙陈弘达
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI