Two-step preparation method and device for growing quartz crucible from monocrystalline silicon
A quartz crucible and monocrystalline silicon technology, which is applied in glass manufacturing equipment, manufacturing tools, glass molding, etc., can solve the problems of failure to succeed, low quality, high energy consumption, etc., and achieve low noise, good quality, The effect of low energy consumption
Inactive Publication Date: 2012-07-11
罗万前
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Problems solved by technology
[0002] When producing monocrystalline silicon, all quartz crucibles are used as containers for containing high-temperature silicon melts. The existing quartz crucibles are produced by arc method during manufacture. This method consumes a lot of energy, has high noise and low quality in the production process.
In the past two decades, many people have been working hard to find new crucible production methods. There are many plans, but due to various problems, none of them succeeded in the end.
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specific Embodiment
[0015] In this embodiment, the special flame closing and back sealing device consists of a frame (7), located on the frame, coaxial (5) with the crucible (2) to be processed, self-rotating, axially movable, with a sealing ring (3 ), a graphite mandrel (4) with two sections of gas channels whose shape matches the inner wall of the crucible, an array of rotatable, axially movable, radially movable and swingable rings, and a gas heating ring composed of multiple combustion heads (1 ) and the pumping and inflation system (6).
[0016] Its preparation method is:
[0017] 1. First, use the internally heated quartz glass continuous electric melting furnace with patent application number 201010204350.1 to directly produce quartz glass tubes with the same diameter as the crucible;
[0018] 2. Cut off the tube, put the cut tube on the special flame closing and sealing device, and then heat the sealing head of the general glass tube with a flame similar process to close and seal the tub...
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The invention discloses a two-step preparation method and device for growing a quartz crucible from monocrystalline silicon, which comprises the following steps: 1. melting a quartz glass tube with the same diameter as the crucible preferably by using an internal-heating-type quartz glass continuous electric melting furnace with high yield per unit time (Patent Application Number 201010204350.1) according to a similar technique for common continuous electric melting quartz; and 2. after cutting off the tube, putting the cut-off tube on a special program-controlled flame necking-in bottom-closing device, carrying out necking-in bottom-closing by using a similar technique for common glass tube necking-in bottom-closing, thereby preparing the tube into the crucible. The crucible has good quality. The method disclosed by the invention can be used for producing crucibles on a large scale, has the advantages of energy saving and environmental protection, and can replace the arc process to produce the quartz crucible for drawing monocrystalline silicon.
Description
technical field [0001] The invention discloses a two-step preparation method and device for a quartz crucible for growing single crystal silicon, belonging to the technical field of semiconductor manufacturing. Background technique [0002] When producing monocrystalline silicon, all quartz crucibles are used as containers for containing high-temperature silicon melts. Existing quartz crucibles are produced by arc method during manufacture. This method consumes a lot of energy, has high noise and low quality in the production process. In the past two decades, many people have been trying to find new crucible production methods. There are many plans, but due to various problems, none of them succeeded in the end. Contents of the invention [0003] The object of the present invention is to find a new preparation method and device for a quartz crucible for growing single crystal silicon. When the crucible is produced by this method, the process has low energy consumption, lo...
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Inventor 张洪齐
Owner 罗万前