Transparent electrode material and preparation method thereof

A technology of transparent electrodes and conductive layers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as instability of flexible substrates, and achieve the effect of easy industrial production, wide application, and industrial production.

Inactive Publication Date: 2012-07-11
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The metal film has good conductivity and light trans

Method used

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  • Transparent electrode material and preparation method thereof
  • Transparent electrode material and preparation method thereof
  • Transparent electrode material and preparation method thereof

Examples

Experimental program
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Effect test

preparation example 1

[0039] Preparation of graphene oxide sol

[0040] To the concentrated sulfuric acid of 98% by weight, the concentration of 1500g is to add 5.0g of natural flaky graphite (particle diameter is 200 μm), 5.0g of sodium nitrate and 25.0g of potassium permanganate, and the resulting mixture is placed in an ice bath at 0°C. After stirring for 5 h under the same conditions (that is, the temperature of the mixture was kept at 0° C. by ice bath), then stirred at 30° C. for 10 h; The concentration of 6mL is the hydrogen peroxide of 30% by weight, after stirring for 1h, filter, then the obtained filter cake is centrifugally washed with hydrochloric acid of 10% by weight, then centrifugally washed with deionized water, and the colloidal product after washing is added to 40 mL of deionized water was ultrasonically dispersed at a power of 200 W to obtain a graphene oxide sol (the content of graphene oxide was 20% by weight, and the content of water was 80% by weight).

Embodiment 1

[0042] This example is to illustrate the preparation method of the b-type transparent electrode material of the present invention.

[0043] (1) Preparation of porous anodized aluminum template: provided by a two-step anodic oxidation method (according to HidekiMasuda and Kenji Fukuda, Ordered Metal Nanohole Arrays Made by a Two-StepReplication of Honeycomb structures of Anodic Alumina, SCIENCE, 268 (9) 1995) method) to prepare a porous anodized aluminum sheet, the aperture of the porous anodized aluminum sheet measured by a scanning electron microscope is 50nm, and the hole spacing is 150nm;

[0044] (2) electron beam evaporation metal layer: use electron beam evaporator (Edwars, AUTO 500) to the anodic aluminum oxide sheet that step (1) obtains and evaporate one deck metal silver, thickness 3nm;

[0045] (3) Remove the alumina template: Place a quartz sheet (Jinzhou Huamei Quartz Electric Appliance Factory, 2cm×2cm in size, 1mm in thickness) under the anodized aluminum sheet ...

Embodiment 2

[0051] This example is to illustrate the preparation method of the b-type transparent electrode material of the present invention.

[0052] (1) The method for chemical vapor deposition prepares nitrogen-doped graphene: with coating machine (KYUY Zhongkekeyi Technology Development Co., Ltd., model SBC-2), with Ni as the target material, deposition time 20s, on a quartz sheet ( Jinzhou Huamei Quartz Electric Appliance Factory, with a size of 2cm×2cm and a thickness of 1mm) was thermally evaporated with 50nm thick Ni. Put the quartz piece into the quartz tube, pass hydrogen (20sccm) and argon (100sccm), when the temperature of the center of the furnace rises to 800°C, feed 60sccm of CH4 and 60sccm of NH3, put the quartz tube into the furnace After 10 min, the sample was cooled to room temperature under hydrogen flow to obtain a nitrogen-doped graphene film. The Ni on the film was dissolved with a phosphoric acid solution with a concentration of 1%, and the graphene surface was wa...

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Abstract

The invention provides a transparent electrode material and a preparation method thereof. The material comprises a substrate and a conductive layer attached on the substrate, wherein the conducive layer contains graphene and metal, the square resistance of the conductive layer is 0.001-1000 omega/sq, the transmittance of the conducive layer in a visible light region is 70-98%, and the transmittance in an infrared light region is 70-98%. As a transparent electrode has a compound structure containing the metal and the graphene, the transparent electrode has excellent performances of high transmittance and low resistance and can enhance the structural stability and the resistance to bending of the transparent electrode due to the addition of the graphene, further an electron transport channel is added and finally the electrical conductivity of the transparent electrode is improved. The transparent electrode material disclosed by the invention has extensive uses in the aspects of optoelectronic devices, photoelectric detectors and semiconductor light emitting, particularly the aspects of flexible solar cells, flexible display devices and other flexible devices. The preparation method disclosed by the invention is simple in process and easy to realize industrial production.

Description

technical field [0001] The invention relates to a transparent electrode material and a preparation method thereof. Background technique [0002] At present, optoelectronic devices such as solar cells, semiconductor detectors, electroluminescence and flat panel displays all require transparent electrodes with low resistance and high light transmission performance. On this basis, the new generation of flexible optoelectronic devices requires bending-resistant transparent conductive electrodes. Transparent conductive oxide films (TCOs), metal films, carbon nanotubes, and graphene are commonly used as transparent electrodes for the aforementioned devices. Among TCOs, ITO (tin-doped indium oxide), which is an indium oxide system, is widely used. However, ITO has many shortcomings. For example, compared with metals such as Ag and Ni, the high resistivity of ITO cannot meet the development requirements of the lower resistivity of the above-mentioned devices, and the lack of indiu...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18
CPCG06F3/041H01L31/022466H01L51/442H01L31/0224H01L33/42Y02E10/549Y02P70/50H10K30/82
Inventor 智林杰邱腾飞梁明会王杰罗彬
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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