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Integrated production method for local oxidation of silicon (LOCOS) multilayer oxide layer

A production method and oxide layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of high cost and achieve the effect of optimizing thickness ratio, low cost, and short production cycle

Active Publication Date: 2012-07-18
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006]1. STI makes device isolation, and the cost is higher than that of LOCOS;
[0007]2. STI can only solve the beak problem of LOCOS isolation, and still needs multiple LOCOS processes to make drift zone oxide layers with different thicknesses

Method used

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  • Integrated production method for local oxidation of silicon (LOCOS) multilayer oxide layer
  • Integrated production method for local oxidation of silicon (LOCOS) multilayer oxide layer
  • Integrated production method for local oxidation of silicon (LOCOS) multilayer oxide layer

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Embodiment 1

[0047] Such as figure 1 As shown, the integrated manufacturing method of the LOCOS multilayer oxide layer provided by the invention comprises the following steps:

[0048] Step S1 , providing the underlying chip structure for forming the multi-layer oxide layer. The underlying chip structure may be a wafer on which a part of the device structure has been fabricated through processes such as diffusion, photolithography, corrosion, and thin film during the process of manufacturing the semiconductor chip. In this embodiment, the lower chip structure refers to the wafer structure that has completed part of the process in the LDMOS manufacturing process and is used to continue to manufacture the oxide layer in the isolation region and the oxide layer in the drift region.

[0049] Step S2, fabricating pads on the underlying chip structure. Wherein, manufacturing the pad includes firstly manufacturing a pad oxide layer (PAD OX), and then manufacturing a pad silicon nitride (PAD SIN...

Embodiment 2

[0060] When adopting the integrated manufacturing method of the LOCOS multilayer oxide layer provided by the present invention to make more oxide layers of various thicknesses, after step S6 and before step S7, the following steps are included:

[0061] After the second oxidation growth, use photolithography and etching processes to define a third thickness oxide layer region on the pad, open an opening in the third thickness oxide layer region, and perform the third oxidation growth, and so on This step is repeated until the nth oxidation growth is completed, thereby forming oxide layers of the first to nth thicknesses, wherein n is a natural number greater than 2. For example, to make oxide layers with four thicknesses, after the third oxide growth, continue to define and open the area of ​​the fourth thickness oxide layer on the pad, and perform the fourth oxide growth to form the first to The fourth thickness oxide layer.

[0062] The thicknesses of the finally formed fir...

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Abstract

The invention discloses an integrated production method for a local oxidation of silicon (LOCOS) multilayer oxide layer, which includes the following steps: a gasket is produced on a lower layer chip structure; a first thickness oxide layer area is defined on the gasket, and an opening is arranged on the first thickness oxide layer area for first oxide growth; then a second thickness oxide layer area is defined, and an opening is arranged for second oxide growth so as to form oxide layers with different thickness; and finally, the gasket is removed for wet process etchback so as to adjust a beak and achieve production of the multilayer oxide layer. The integrated production method for the LOCOS multilayer oxide layer adopts the LOCOS process, is capable of optimizing thickness ratio and wet process etchback of the multilayer oxide layer by integrating processes of the multilayer oxide layer, resolves the problem that the beak exists when the oxide layers with different thickness exist simultaneously, and achieves low cost and short production cycle.

Description

technical field [0001] The invention relates to a method for manufacturing an integrated circuit (IC), in particular to an integrated method for manufacturing oxide layers with various thicknesses using a LOCOS (LOCal Oxidation of Silicon) process, and belongs to the field of semiconductor device manufacturing. Background technique [0002] With the continuous development of integrated circuits, the LDMOS (Lateral Double-diffused MOS) process integrates devices with various withstand voltage specifications on the same chip. Among them, the LOCOS (LOCal Oxidation of Silicon) process is often used on the same wafer to isolate and manufacture devices with various withstand voltage specifications at the same time. [0003] The manufacturing process of the traditional LOCOS process is: first grow pad oxide layer (PAD OX) and pad silicon nitride (PAD SIN) on the silicon substrate, then use photolithography and etching to define the area where the oxide layer needs to be grown, and...

Claims

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Application Information

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IPC IPC(8): H01L21/762
CPCH01L21/76202H01L21/762
Inventor 吴孝嘉罗泽煌章舒许剑何延强何敏
Owner CSMC TECH FAB2 CO LTD
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