Low-resistance buried-gate solar cell and manufacture method thereof
A technology of solar cells and manufacturing methods, which is applied in the manufacture of circuits, electrical components, and final products, can solve problems such as incompleteness, and achieve the effects of increasing the contact area, reducing the front contact resistance, and solving the contact area and electrode shading area
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2012-07-18
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to a low-resistance buried grid solar cell and a manufacturing method thereof. Background technique
[0002] Such as figure 1 As shown, the current screen printing technology is equivalent to placing metal directly on the front surface of the solar cell. Since Ag is an opaque substance, the area where the electrodes exist is equivalent to being blocked from the incident light. Although the blocked semiconductor region is not completely unable to perform photoelectric conversion due to the refraction and diffraction effects of light, the blocking effect of the front electrode is still a considerable part of the efficiency loss. Therefore, the current technical improvement generally hopes to accumulate the same amount of Ag paste in the smallest possible range, that is, to increase the aspect ratio of the front electrode; this can reduce the gap between the electrode and the semiconductor while reducing the shading area. contact ...
Examples
Embodiment Construction
[0016] Such as figure 2 As shown, a low-resistance buried grid solar cell is provided with a front electrode on the light-receiving surface of the battery 2. On the light-receiving surface of the battery 2, a trapezoidal groove 3 with an upper narrow and a lower width is opened at the position where the front electrode needs to be arranged. A trapezoidal buried gate electrode 1 is fabricated inside.
[0017] Such as image 3 As shown, the manufacturing method of the low-resistance buried grid solar cell is as follows: firstly, a trapezoidal groove 3 is made by laser grooving at the position where the trapezoidal buried gate electrode 1 needs to be formed;
[0018] The light-receiving surface forms a PN junction through a diffusion process, and the PN junction also exists in the trapezoidal groove 3;
[0019] Then use screen printing technology to inject the Ag paste into the trapezoidal groove 3;
[0020] Finally, Al paste and Ag-Al paste are printed on the back and sinter...