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Method and apparatus for irradiating a photovoltaic material surface by laser energy

An irradiation, material layer technology, applied in photovoltaic power generation, sustainable manufacturing/processing, electrical components, etc., can solve the problems of increasing complexity, cost and change, expensive operation, difficult to control, etc., to improve the overall performance. Effect

Inactive Publication Date: 2012-07-18
艾思科集团公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] Furthermore, post-deposition heating of CIGS layers typically must be performed in a carefully balanced, selenium-rich environment, adding complexity, cost and a source of variability to the overall process.
[0016] From the above, it is evident that current deposition and post-deposition heating methods are both slow and expensive, requiring physical repositioning of the substrate between successive deposition steps, or time-consuming and expensive chamber cleaning and conditioning operations
Furthermore, these methods are difficult to control and expensive to operate

Method used

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Effect test

no. 1 approach

[0028] According to a first embodiment of the present invention, there is provided a method of manufacturing a TF-PV material, the method comprising:

[0029] - providing a layer of TF-PV material having a degree of crystallinity, and

[0030] - irradiating the surface area of ​​the TF-PV material layer by means of a laser source with irradiation parameters,

[0031] It is characterized in that the irradiation parameters are chosen such that the crystallinity increases at least at the top layer of the surface area.

[0032] According to the present invention, short-duration localized heating by irradiating different parts of the TF-PV cell structure via laser irradiation can be used to selectively alter the physical, optical and electronic properties of the deposited film and thereby Improves the overall performance of the battery. In particular, a change in the crystalline, polycrystalline or amorphous structure present in different parts of the film can be induced.

[003...

Embodiment 1

[0054] a) depositing a TF absorber film comprising at least one layer of amorphous silicon, followed by

[0055] b) Partially recrystallize the amorphous silicon layer to produce a stack with different amorphous silicon / microcrystalline layers, whereby the explosive recrystallization effect is used to obtain recrystallization at depths well beyond the radiation absorption depth.

Embodiment 2

[0057] a) Applying a TCO (transparent conducting) layer (eg, sputtered ZnO) onto the TF absorber layer comprising at least one layer of amorphous silicon, followed by

[0058] b) Partially recrystallize the amorphous silicon layer to produce stacks with different amorphous silicon / microcrystalline layers, thereby exploiting the explosive recrystallization effect to depths well beyond both the radiation absorption depth and the non-explosive melting front depth Recrystallization is obtained at depth, while

[0059] c) Simultaneous heating of the overlying TCO layer during the irradiation step in order to improve the optical and electrical properties of the TCO film and to improve, ie reduce, the resistance of the TCO-semiconductor junction.

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Abstract

The present invention is related to a method for manufacturing TF-PV material comprising: - providing a TF-PV material layer having a degree of crystallinity, and - irradiating a surface region of the TF-PV material layer by means of a laser source having irradiation parameters, characterized in that the irradiation parameters are selected such that the degree of crystallinity is increased at least at a top layer of the surface region.

Description

field of invention [0001] The invention relates to a method for irradiating the surface of a photovoltaic material by means of a laser. Background of the invention [0002] As a low-cost, and thus potentially commercially important, alternative to conventional photovoltaic cells fabricated from crystalline semiconductors, so-called "thin-film" photovoltaic (TF-PV) cells have been developed. These TF-PV cells typically require about 2 orders of magnitude less semiconductor material for their fabrication than conventional photovoltaic cells fabricated from bulk semiconductor material. [0003] TF-PV cells include many different cell designs, such as microcrystalline silicon (μc-Si:H) PV cells, amorphous silicon / microcrystalline silicon (a-Si:H / μc-Si:H) PV cells, and CIGS (Copper Indium Gallium Selenide) PV cells. [0004] The main element of a TF-PV cell consists of a thin-film stack on glass or other suitable flexible or rigid substrate, the TF stack essentially consists of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/20H01L31/0336
CPCH01L31/0749H01L31/20H01L31/1872Y02E10/50Y02E10/541Y02P70/50H01L31/04H01L31/18
Inventor 西蒙·雷克
Owner 艾思科集团公司