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Preparation method of nano capacitor

A technology for capacitors and capacitor structures, applied in the direction of capacitors, fixed capacitors, fixed capacitor electrodes, etc., can solve the problem of not being able to store more energy, achieve the effects of easy operation, reasonable and simple preparation method, and increase energy density

Inactive Publication Date: 2012-08-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current nanocapacitor array cannot store much energy due to its small size. At the same time, there are certain problems in the interconnection of multiple array structures. How to ensure the expansion of the ratio and the normal operation of all capacitors remains to be further studied.

Method used

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  • Preparation method of nano capacitor
  • Preparation method of nano capacitor

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] in figure 1 The medium LB membrane tank is an ultra-pure aqueous solution. When a certain concentration of Au hollow nanoparticles / n-butanol solution is added to the surface of the ultra-pure aqueous solution, the Au nanoparticles can be effectively assembled at the gas / liquid interface until the n-butanol evaporates Then control the sliding barrier to compress the nanoparticles at a certain speed, and keep the film pressure constant for a period of time after reaching the required surface pressure, and then control the substrate to transfer the hollow metal nanoparticle LB film to the surface of the conductive substrate at a certain speed.

[0042] in figure 2 In, the substrate deposited with hollow metal nanoparticles is placed in the cavity of the atomic deposition equipment, and the capacitor is obtained by the atomic deposition method ( figure 2 Middle 6).

[0043] in figure 2 In the method, an ultra-thin metal film is prepared on the surface of the ultra-thin nano-di...

Embodiment 2

[0052] Such as figure 2 , The nanoparticles are metal Au hollow nanoparticles.

[0053] The preparation process of the nanocapacitor is similar to the first embodiment. In the process of transferring the nanoparticles to the substrate, two layers of nanoparticles are transferred to the substrate to form a capacitor array structure of two layers of hollow nanoparticles.

[0054] Thus, two layers of hollow Au nanoparticles-Al 2 O 3 -TiN nano capacitor array.

Embodiment 3

[0056] Such as figure 2 , The nanoparticles are metallic Ag hollow nanoparticles.

[0057] The preparation process of the nanocapacitor is similar to the first embodiment. Because the nanoparticles are metal tantalum nanoparticles, a single layer of Ag nanoparticles-Al is obtained. 2 O 3 -TiN structure nanocapacitor

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Abstract

The invention discloses a preparation method of a nano capacitor, comprising the steps that: a high-density hollow nano particle film is firstly prepared on a substrate by Langmuir-Blodgett (LB) method to serve as one electrode of the capacitor; a dielectric nano film is deposited on the surface of the hollow nano particle film through atomic layer deposition (ALD) method to serve as a dielectric material of the capacitor; and finally, a metallic nano film is deposited on the dielectric film through the ALD method to serve as the other electrode of the capacitor, and a metal-insulator-metal nano capacitor structure is formed. The nano capacitor prepared by the method and the array technology overcome the defects in the prior art, and further, the preparation method is reasonable and simple, and the operation is easy.

Description

technical field [0001] The invention relates to the field of electronic material components, in particular to a method for preparing a nanocapacitor based on high-density metal hollow nanoparticles. Background technique [0002] With the development of social science and technology, there is a demand for high-efficiency and clean energy, and the development of energy storage devices with long cycle life and high energy storage density has always been a hot spot for researchers in many fields. As the energy storage device occupies the largest proportion of weight and volume in the energy system, the improvement of its energy storage density is of great significance. The development of new energy storage devices supports the development of energy systems towards miniaturization and light weight. [0003] Compared with electrochemical capacitors, the current energy density of electrostatic capacitors is low. On the one hand, the working mechanism limits the further improvement ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/00H01G4/005H01G4/06
Inventor 杨亚杰蒋亚东徐建华杨文耀
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA